Nxp B.v.

Ivan Mitkov Zahariev

Gian Hoogzaad

Tony Vanhoucke

Mark Pieter Van Der Heijden

Anco Heringa

Jan Willem Slotboom

Evelyne Gridelet

Jozef Reinerus Maria Bergervoet

Viet Thanh Dinh

Amin Hamidian

Godefridus Antonius Maria Hurxk

A matching circuit comprising: an input-terminal configured to be connected to an active-circuit; an output-terminal configured to be connected to a downstream component; a current-source configured to provide a disabled-current; one or more diode-modules, each comprising a diode and a biasing-resistor in parallel with each other; and a reactive-matching-component that has a reactive impedance. The current source is configured to pass the disabled-current through the one or more diode-modules and the reactive-matching-component when the matching circuit is in a disabled-mode of operation such that they contribute to the impedance of the matching circuit between the input-terminal and the output-terminal.

Matching circuit

A Doherty amplifier comprising: a main-power-amplifier having a main-amp-output-terminal; a peaking-power-amplifier having a peaking-amp-output-terminal; a combining node; a main-output-impedance-inverter connected between the main-amp-output-terminal and the combining node; and a transformer connected between the peaking-amp-output-terminal and the combining node.

Doherty amplifiers

A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.

Semiconductor device and circuit with dynamic control of electric field

Growing community of inventors

Nijmegen, Netherlands

Ivan Mitkov Zahariev