Intel Corporation

University of Toronto

Ivan Kalastirsky

Xin Guo

Mase J Taub

Andrew W Vogan

Paul D Ruby

Wai Tung Ng

Hanmant Pramod Belgal

Ning Wu

Clement A Salama

Jeewika Chandanie Ranaweera

Elvira Gulersen

Described are an apparatus, system, and method for improving read endurance for a non-volatile memory (NVM). The method comprises: determining a read count corresponding to a block of NVM; identifying whether the block of NVM is a partially programmed block (PPB); comparing the read count with a first threshold when it is identified that the block is a PPB; and when identified otherwise, comparing the read count with a second threshold, wherein the first threshold is smaller than the second threshold. The method further comprises: identifying a block that is a PPB; determining a first word line corresponding to un-programmed page of the PPB; and sending the first word line to the NVM, wherein the NVM to apply: a first read voltage level to word lines corresponding to the un-programmed pages of the PPB, and a second read voltage level to word lines corresponding to programmed pages of the PPB.

Apparatus, system, and method for improving read endurance for a non-volatile memory

Method of fabricating a fast programmable flash E.sup.2 PROM cell

Growing community of inventors

Folsom, CA, United States of America

Ivan Kalastirsky