Avago Technologies General IP (singapore) Pte. Ltd.

Ivan Ionash

John Choy

Kevin J Grannen

Chris Feng

Tina L Lamers

John Dwight Larson, Iii

Paul D Bradley

Steve Gilbert

A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.

Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics

A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.

Bulk acoustic wave resonator having piezoelectric layer with multiple dopants

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Ivan Ionash