Taiwan Semiconductor Manufacturing Comp. Ltd.

Ivan Hua-Shu Wu

Chun-Ren Cheng

Chi-Yuan Shih

Shih-Fen Huang

Wen-Chuan Tai

Yi-Chuan Teng

You-Ru Lin

Ching-Hui Lin

Yi Heng Tsai

Kai-Fung Chang

Fu-Chun Huang

Fan Hu

Yan-Jie Liao

Yen-Wen Chen

Anderson Lin

The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.

Reduction of electric field enhanced moisture penetration by metal shielding

Growing community of inventors

Hsinchu County, Taiwan

Ivan Hua-Shu Wu