Infineon Technologies Ag

Osram Opto Semiconductors Gmbh

Ivan Galesic

Joachim Mahler

Khalil Hosseini

Edmund Riedl

Ralf Otremba

Alexander Heinrich

Manfred Schneegans

Bert Braune

Karsten Guth

Thomas Behrens

Konrad Roesl

Christina Keith

A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.

Method and device for producing a parylene coating

An electronic component includes a metal substrate, a semiconductor chip configured to be attached to the metal substrate, and a buffer layer positioned between the metal substrate and the semiconductor chip configured to mechanically decouple the semiconductor chip and the metal substrate. The buffer layer extends across less than an entire bottom surface of the semiconductor chip.

Electronic component with buffer layer

An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer.

Integrated circuit device and method

A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

Method for the planar joining of components of semiconductor devices and a diffusion joining structure

A bonding head includes a pressure plate to press a component (e.g., a semiconductor chip) onto a substrate. The pressure plate includes a holding surface configured to hold the component and to allow the component to be pressed uniformly onto the substrate, thus allowing a particularly reliable connection. The bonding head can further include an apparatus configured to vary the curvature of the holding surface of the pressure plate.

Method for production of a semiconductor component

A semiconductor chip arrangement and method is disclosed. In one embodiment, the invention provides a method for providing a semiconductor chip arrangement including providing a semiconductor chip having a first connecting area, and providing a chip carrier having a concave shaped section formed in a second connecting area. A connecting mechanism is provided between the first connecting area and the second connecting area and pressing the semiconductor chip onto the chip carrier such that the connecting mechanism positively locks the first connecting area to the concave shaped section of the second connecting area.

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Wuppertal, Germany

Ivan Galesic