Stmicroelectronics S.r.l.

Stmicroelectronics International N.v.

Ivan Clemente Massimiani

Akshat Jain

A driving circuit including a reference voltage generator to generate a reference voltage based on an operating frequency of a complementary circuit; a comparator including a first input configured to receive a drain-to-source voltage of a field effect transistor; and a second input to receive the reference voltage; and a signal generator to deliver a driving signal to a gate terminal of the field effect transistor to drive the field effect transistor to an ON state after the drain-to-source voltage of the first low side field effect transistor becomes less than the reference voltage and to an OFF state after the drain-to-source voltage of the field effect transistor becomes greater than the reference voltage.

Methods and device to drive a transistor for synchronous rectification

A sense terminal is configured to sense a drain-to-source voltage of a field effect transistor and a drive terminal is configured to drive the gate terminal of the field effect transistor to alternatively turn the field effect transistor on and off to provide a rectified current flow in the field effect transistor channel. A comparator is configured to perform a comparison of the drain-to-source voltage of the field effect transistor with a reference threshold and to detect alternate downward and upward crossings of the reference threshold and the drain-to-source voltage. A PWM signal generator is configured to drive the gate terminal of the field effect transistor to turn the field effect transistor on and off as a result of the alternate downward and upward crossings of the reference threshold by the drain-to-source voltage.

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Catania, Italy

Ivan Clemente Massimiani