Commissariat a L'energie Atomique Et Aux Energies Alternatives

Aledia

Thales

Intel Corporation

Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies

Alcatel Lucent

Ivan-Christophe Robin

Hubert Bono

Xavier Hugon

Frédéric Mercier

Frédéric Mayer

Philippe Gilet

Amélie Dussaigne

Matthieu Charbonnier

Stéphane Caplet

Alexei Tchelnokov

Olivier Jeannin

Zine Bouhamri

Umberto Rossini

Erwan Dornel

Bruno Mourey

Tiphaine Dupont

Yohan Desieres

Matthew Charles

Pierre Ferret

Christophe Lincheneau

Sansaptak W Dasgupta

Khaled Ahmed

Maud Vinet

Ying-Lan Chang

Johan Rothman

François Templier

Bertrand Delaet

Marie-Claire Cyrille

Jean Berthier

Eric Pourquier

Emeric De Foucauld

Guy Feuillet

Bertrand Dupont

Léa Di Cioccio

Sophie Giroud

Sylvia Scaringella

René Escoffier

Alain Fargeix

Erwan Morvan

Jonathan Garcia

Séverine Cheramy

Stéphanie Le Calvez

Abdelhay Aboulaich

Thierry Bouchet

Jérôme Napierala

Armelle Even

Audrey Sanchot

Stéphanie Gaugiran

Miryam Elouneg-Jamroz

Wei-Sin Tan

Nohora Caicedo

Eric Mottin

Ricardo Izquierdo

A method of manufacturing an optoelectronic device including the steps of manufacturing of the display pixel circuits, each comprising an emission surface, and on the surface, walls delimiting at least one cavity, of bonding of the display pixel circuits to a support, and of filling of the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.

Optoelectronic device manufacturing method

A display block including an optoelectronic circuit including-light-emitting diodes of at least two display pixels and having a first surface of emission of the light radiations of the light-emitting diodes; and diffusing structures covering the optoelectronic circuit, each diffusing structure being in contact with a portion of the first emission surface and having a second surface of emission of the light radiations of the light-emitting diodes of one of the display pixels, the ratio of the sum of the areas of the second emission surfaces to the area of the first emission surface being greater than 2.

Display pixel comprising light-emitting diodes for a display screen

A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Method for protecting an optoelectronic device from electrostatic discharges

Disclosed is a device including at least one emitting element and a polariser, each emitting element being configured to emit a first radiation having a first range of wavelengths, the polariser being configured to be traversed at least partially by the first radiation, each emitting element including an emitter and a converter the emitter being configured to emit a second radiation having a second range of wavelengths, the second range being distinct from the range, the converter being configured to at least partially absorb the second radiation and to emit the radiation in response, each converter being interposed between the corresponding radiation emitter and the polariser. Each converter is configured so that the first radiation is rectilinearly polarised along a polarisation direction.

Optoelectronic device comprising a polariser and at least one radiation emitter

A positioning mask includes a body delimiting conduits dimensioned to each accommodate a single functional electronic object and opening through a first opening on a cooperation face, and through a second opening on a reception face. A system for manufacturing an optoelectronic device includes functional electronic objects distributed and fixed on a reception face of a screen substrate. The system further includes a positioning mask of the aforementioned type as well as a supplying unit for freely depositing an assembly of functional electronic objects on the reception face, and a placing unit for positioning the cooperation face facing the reception face, the conduits being arranged at predetermined locations on the reception face where the functional electronic objects are positioned. A method for manufacturing an optoelectronic device is also related.

Positioning mask, system and method for manufacturing an optoelectronic device

An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

Optoelectronic device comprising light-emitting diodes having multiple quantum wells

A method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light-emitting diode or a photodiode. The method comprises forming a first wafer, comprising a plurality of copies of the optoelectronic circuit, bonding the first wafer to a support, separating the optoelectronic devices from one another, and removing from the support a plurality of optoelectronic devices from among said optoelectronic devices by means of a gripping system, wherein the gripping system comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Method for protecting an optoelectronic device against electrostatic discharges

An optoelectronic device includes at least one primary sub-pixel having at least one first primary stack with at least two first main layers of indium nitride and gallium nitride, the layers separated in pairs at least by a first intermediate layer of gallium nitride. The device includes a first primary active layer with at least one first quantum well, and a second primary stack having at least two second main layers of indium nitride and gallium nitride the layers separated in pairs by a second intermediate layer of gallium nitride; at least one second primary active layer with one second quantum well; and a first primary junction layer formed on and in contact with the second primary active layer, the first primary junction layer doped according to a second type of doping chosen from an N-type and a P-type dopings, the second type of doping different from the first type.

Optoelectronic device comprising pixels which emit three colors

A light-emitting diodeincludes a first region, for example of the P type, formed in a first layerand forming, in a direction normal to a basal plane, a stack with a second regionhaving at least one quantum well formed in a second layer, and including a third region, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions, through the first and second layers. A process for producing a light-emitting diodein which the third regionis formed by implantation into and through the first and second layers

Light-emitting diode with electrodes on a single face and process of producing the same

A display screen intended to display a multiple-resolution image and including a plurality of pixels distributed on a support, the screen including a first zone of a face of the support having a first density of pixels, enabling to display a first part of the image at a first resolution, and a second zone of the face of the support having a second density of pixels, strictly greater than said first density, enabling to display a second part of the image at a second resolution. The disclosure also relates to a display system including such a screen and a method for producing the screen.

Multiple resolution display screen and production method

A method for manufacturing an electronic device including the following steps: a) forming a wafer of electronic chips; b) fixing the wafer of electronic chips to a first support made of a stretchable material; c) removing and/or etching the wafer; and d) stretching the first support so as to move the chips away from one another.

Electronic device

An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 μm and 30 μm, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

Optoelectronic device comprising light-emitting diodes with improved light extraction

An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Optoelectronic device

An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

Optoelectronic device having optical systems that can be moved between different pixels, and control method

An image display system includes at least one user parameter analyser configured to determine at least one parameter associated with a user, an image display screen having luminous pixels, at least one graphics processing unit configured to process at least one first main image that can be displayed on the image display screen and that is representative of a first zone of a main scene. The system further includes at least one image buffer device configured to store at least the first main image, and a graphics controller configured to control a display of at least one first secondary image on the image display screen, the first secondary image having a first portion of the first main image included in the first main image and positioned within the first main image as a function of a first user parameter.

Image display system and control method

Growing community of inventors

Grenoble, France

Ivan-Christophe Robin