Varian Associates, Inc.

Other

Varian, Inc.

Ivan Bozovic

James N Eckstein

Martin E Klausmeier-Brown

Gary Fredric Virshup

Gary F Virshap

A thin-film of a high temperature superconducting compound having the formula M,CuO,, where M is Ca, Sr, or Ba, or combinations thereof, x is 0.05 to 0.3, and x>y. The thin film has a T,(zero resistivity) of about 40 K. Also disclosed is a method of producing the superconducting thin film.

Thin-film of a high-temperature superconductor compound and method

A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.

Method of producing a high T.sub.c superconducting film free of second

A hysteretic high-T.sub.c trilayer Josephson junction, and a method of forming the same are disclosed. The junction includes lower and upper high T.sub.c superconducting cuprate films separated by a barrier layer, where the thin films each include a molecular junction layer adjacent the barrier layer which is characterized by a high-T.sub.c cuprate stoichiometry and crystal structure, and a flat two-dimensional surface, as evidenced by its electron diffraction pattern using reflected high-energy electron diffraction. The junction and barrier layers in the junction are formed by atomic layer-by-layer deposition.

High-temperature Josephson junction and method

A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam blocked and with the beam unblocked and by calculating the concentration based on the: ##EQU1## and applying corrections for non-linear absorption curves because of comparable spectral bandwidth of the molecular beam.

Method of deposing by molecular beam epitaxy

Compounds of the formula Bi.sub.1 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+3+x wherein n is a positive integer and x is less than 1 are formed by molecular beam epitaxial deposition of a plurality of atomic layers on a substrate in the following composition sequence: ##STR1##

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Palo Alto, CA, United States of America

Ivan Bozovic