Applied Materials Israel Limited

Itzak Yair

Yoram Uziel

Igor Krivts (Krayvitz)

Nir Ben-David Dodzin

Israel Avneri

Samuel Ives Nackash

Yuri Belenky

Ido Holcman

Lavy Shavit

Rafi Kraus

Yosi Basson

A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.

System and method for temperature control of a semiconductor wafer

A coupling module may include an upper portion that defines an aperture, mask contact elements, chuck contact elements and an intermediate element that is connected between the mask contact elements and the upper portion. A shape and a size of the aperture may correspond to a shape and size of a pattern transfer area of an extreme ultra violet (EUVL) mask. The coupling module may be shaped and sized so that once the mask contact elements contact the upper portion of the EUVL mask, the chuck contact elements contact a chuck that supports the mask. The coupling module may further provide at least one conductive path between the upper portion of the EUVL mask and the chuck when the EUVL mask is positioned on the chuck.

Conductive element for electrically coupling an EUVL mask to a supporting chuck

Growing community of inventors

Ramat Ishai, Israel

Itzak Yair