Semiconductor Energy Laboratory Co., Ltd.

Itaru Koyama

Shunpei Yamazaki

Kazuo Urata

Naoki Hirose

Hongyong Zhang

Hideki Uochi

Noriya Ishida

Shinji Imatou

Mari Sasaki

Hiroki Adachi

Shigenori Hayashi

Mitsunori Tsuchiya

Kouhei Wada

Shunepi Yamazaki

Yasuhiko Takemura

Toshimitsu Konuma

Akira Sugawara

Minoru Miyazaki

Yukiko Uehara

Akane Murakami

Kazuhisa Nakashita

An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Electronic device and its manufacturing method

Electronic device including a densified region

An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode in an electrolyte to form an oxide of the metal covering them. Since the connecting wirings are covered with a suitable organic film before the anodizing, no aluminum oxide is formed thereon so that it is easy to remove the connecting wiring by usual etching.

Method of making thin film transistor with anodic oxidation

Electric circuit and method for forming the same

A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.

Method of patterning aluminum containing group IIIb Element

Method of forming electric circuit using anodic oxidation

An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed with moulding. In advance of the moulding process, the rear surface of lead frame of the IC chip is cleaned and coated with an antioxidation film made of silicon nitride in order to avoid the oxidation of the lead frame. The antioxidation film ensures the connection of the moulding and the lead frame and protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the lead frame.

Electric device utilizing antioxidation film between base pad for

An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.

Plasma processing method for improving a package of a semiconductor

An improved electric device and a manufacturing method for the same is described. The device is for example an IC chip clothed with molding. The IC chip is mounted on a lead frame by means of an adhesive such as a glass-type silver paste which discharges little amount of gases and the rear surface of the lead frame is covered with an antioxidation film of silicon nitride.

Electric device having a leadframe covered with an antioxidation film

An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.

Method of manufacturing a semiconductor using plasma processing

Growing community of inventors

Hatano, Japan

Itaru Koyama