Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Taiyo Sanso Co., Ltd.

Other

Kao Corporation

Taiyo Toyo Sanso Co., Ltd.

Itaru Kanno

Takaaki Fukumoto

Toshiaki Ohmori

Masuo Tada

Hiroshi Tanaka

Seiji Muranaka

Nobuaki Doi

Hiroshi Morita

Tetsuo Aoyama

Masayuki Takashima

Nobuyoshi Hattori

Cozy Ban

Naoki Yokoi

Mami Shirota

Junji Kondo

Takeshi Kuroda

Naoki Ichiki

Mayumi Hada

Mitsuhiro Ogawa

Hiroi Takahiko

Akiko Hisasue

Hideaki Nezu

Cleaning agent for semiconductor device & method of fabricating semiconductor device

Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO are exposed on the surface of a wafer after etching of a metal gate.

Method of manufacturing semiconductor device with improved removal of resist residues

The resist residue removal method removes resist residues caused at the time of formation of an aluminum wiring pattern on a semiconductor wafer. The method includes the steps of removal fluid processing, washing, and drying. The method involves forming an atmosphere within a chamber, which houses a semiconductor wafer having an exposed aluminum wiring pattern, by controlling gas flow into the chamber according to the processing step being performed. By the resist residue removal method, yield of a wiring pattern is improved by prevention of local etching of an aluminum wiring pattern, or by prevention of thinning of the aluminum wiring pattern.

Resist residue removal apparatus and method

In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.

Method and apparatus for manufacturing semiconductor device

In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape is formed on the workpiece layer. The workpiece layer is dry-etched through the resist pattern serving as a mask. The resist pattern is removed. Ice particles or droplets are injected toward the wafer, thereby removing the deposit.

Post-treatment method for dry etching

The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

Washing apparatus and washing method

A two-fluid cleaning jet nozzle has an atomizing unit provided with an atomizing tube in which a liquid is atomized by a pressurized gas into liquid droplets, and an accelerating unit provided with an accelerating tube which accelerates and jets the liquid droplets against the surface of a workpiece to remove dust particles adhering to the surface of the workpiece. The sectional area of the atomizing tube available for gas flow is greater than the sectional area of the accelerating tube available for flow of the gas and the liquid droplets. The accelerating tube has the shape of a straight cylindrical tube or a Laval nozzle.

Two-fluid cleaning jet nozzle and cleaning apparatus, and method

A cleaning apparatus is provided which removes contaminants sticking onto a wafer without damaging a device. The cleaning apparatus includes liquid supply means 23 for supplying a liquid not reactive to material constituting a wafer 1, and droplet forming means 10 for interrupting the liquid supplied from liquid supply means 23 to form a droplet 21 out of the liquid. The cleaning apparatus further includes spurting means 22 for spurting the droplet 21 toward the surface of wafer 1.

Wafer cleaning apparatus

Obtained are a washing apparatus inhibiting a washing liquid from losing its washability and a method therefor. A circulating pump (5) circulates a washing liquid (3) successively through a heater (6), a filter (7), and an overflow washing tank (2). The washing liquid (3) is gradually evaporated. On the other hand, a water supplier (10) supplies the overflow washing tank (2) with water through a tube (8). An amine supplier (11) supplies the overflow washing tank (2) with amines through a tube (9). A control unit (12) controls the quantities of the water and amines as supplied. In a washing part (50), therefore, the quantities of the water and amines are inhibited from being reduced upon a lapse of time from operation starting, whereby the washing liquid (3) is inhibited from losing its washability.

Washing apparatus and method therefor

A wafer rinsing apparatus includes an ice making hopper for making ice particles by heat exchange between fine droplets of liquid to be frozen and low-temperature liquefied gas. The ice making hopper is connected to a separation device for separating the ice particles and vaporized gas generated from the low-temperature liquefied gas. The ice particles separated by the separation device are jetted onto a wafer by a jetting device, thereby rinsing the surface of the wafer.

Wafer rinsing apparatus

A novel and improved polishing apparatus is disclosed which employs ice particles as an abrasive material, the hardness of which can be changed so as to match that of an article being polished for performing polishing operation in a most efficient manner without impairing or marring the polished surface of the article. To this end, the polishing apparatus includes a freezing vessel defining therein an ice particle producing chamber, a coolant supply nozzle mounted on the freezing vessel and connected with a coolant source through a coolant supply line for spraying a coolant into the ice particle producing chamber to form a freezing atmosphere, a liquid supply nozzle mounted on the freezing vessel and connected with a liquid supply for spraying a liquid into the ice particle producing chamber so that the liquid thus sprayed is cooled and freezed by the freezing atmosphere to produce superfine ice particles, a particle hardness adjuster for adjusting the hardness of the ice particles to be produced so as to match the hardness of an article being polished, and an injection nozzle for injecting the ice particles towards a surface of the article for polishing thereof. Preferably, the particle hardness adjuster comprises a flow control valve which is disposed on the coolant supply line between the coolant supply nozzle and the coolant source for adjusting and changing the amount of coolant sprayed therefrom into the ice particle producing chamber so as to control the temperature therein.

Apparatus for polishing an article with frozen particles

A device for and a method of producing hyperfine frozen particles reduces the quantity of impurity particles in the hyperfine frozen particles produced and stabilizes the generation of hyperfine frozen particles. A hopper includes a heat exchanger through which a coolant, such as nitrogen gas or liquid nitrogen, is circulated. A nitrogen gas inlet through which low temperature nitrogen gas as a coolant is supplied includes a filter to produce a laminar flow of the gas.

Device for and method of producing hyperfine frozen particles

To remove foreign matter (contaminants in the form of fine particles or a film of oil) deposited on a solid surface, fine frozen particles (0.01 .mu.m to 5 mm in diameter) are used. The fine frozen particles, together with chilled nitrogen, are jetted onto the surface of a solid by the pressure of a carrier gas (nitrogen (N.sub.2) gas). These fine frozen particles are produced by freezing a liquid such as water (super pure water) or alcohol. The hardness of the fine frozen particles is adjusted according to the type of liquid, the frozen freezing temperature and jetting temperature in order to control the damage to the surface of the solid. Low temperature cleaning (0.degree. to -150.degree. C.) in which fine frozen particles and chilled nitrogen are sprayed is achieved.

Method of cleaning a surface by blasting the fine frozen particles

A cleaning device for semiconductor wafers includes a cleaning vessel, a frozen particle supply unit, a jet nozzle for ejecting the frozen particles toward the semiconductor wafer supported within the cleaning vessel, an exhaust duct coupled to the cleaning vessel, and an exhaust blower. First and second exhausts guide to the exhaust duct frozen particles and contaminants from within the cleaning vessel near the wafer and near the walls of the vessel, respectively. The first exhaust includes a first exhaust guide pipe whose upper and lower ends open to an interior of the cleaning vessel near the wafer and to the exhaust duct, respectively. The second exhaust may include a tapered exhaust guide pipe surrounding the first exhaust guide pipe or a plurality of exhaust guide pipes disposed circumferentially uniformly around the first exhaust guide pipe.

Growing community of inventors

Tokyo, Japan

Itaru Kanno