National Semiconductor Corporation

Nuvoton Technology Corporation

Itai Derman

Alexander Kalnitsky

Moshe Meyassed

An electronic circuit includes a voltage regulator and an undershoot reduction circuit. The undershoot reduction circuit is configured to receive an indication of an event that potentially causes an undershoot in an output of the voltage regulator, and, in response to the indication, to generate and couple to the output of the voltage regulator a pulse that reduces the undershoot.

Reduction of output undershoot in low-current voltage regulators

The logic state stored in a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and a n-channel MOS access transistor is read by a sense amplifier which senses the magnitude of the current output from the memory cell during a read operation. The sense amplifier controls the voltage drop across the memory transistor and the access transistor (and a switching transistor) which, in turn, allows the difference in the magnitudes of the current from the programmed and unprogrammed cells to be optimized.

Memory device with sense amplifier that sets the voltage drop across the

The unintentional programming of a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and an n-channel MOS access transistor, which can occur during a read operation when high read voltages are used, is eliminated by forming a diode-connected MOS transistor in parallel with the access transistor. The diode-connected transistor is formed to be off when an unprogrammed memory transistor is read, and to be on when a programmed memory transistor is read.

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Haifa, Israel

Itai Derman