Ag Associates (israel) Ltd.

Kla-tencor Technologies Corporation

Streag Cvd Systems Ltd

Itai Bransky

Benjamin Brosilow

Hedvi Spielberg

Yitzhak Eric Gilboa

Sagy Levy

Arie Harnik

Arkady Simkin

Igor Baskin

Shachor Omer

Michael Sandler

Automated comparison of tool recipes is described. A target recipe is digitally translated from a tool language to a standard language format to produce a translated recipe. The translated recipe is digitally compared to a source recipe that is also in the standard language format.

Automatic recipe validation

A method and apparatus for selectively depositing hemispherical grained silicon on the surface of a wafer in a process chamber. The chamber is evacuated so that a partial pressure of water vapor in the chamber is less than 10 torr, preferably using a turbomolecular pump and a water vapor pump in cooperation. A process gas mixture including silicon is introduced into the chamber. The surface of the wafer is seeded with silicon nuclei, and the wafer is annealed to convert the silicon to HSG.

Wafer processing with water vapor pumping

Systems and methods are described for semiconductor wafer pretreatment. A method of treating a semiconductor wafer, includes contacting the semiconductor wafer with a mixture including HF and CH,OH; and then contacting the semiconductor wafer with Cl,and simultaneously exposing said semiconductor wafer to a source of ultraviolet energy. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

Semiconductor wafer pretreatment utilizing ultraviolet activated chlorine

Systems and methods are described for semiconductor wafer pretreatment. A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint includes: providing a semiconductor wafer with the underlying oxide layer in a processing chamber; then pumping water from then processing chamber; and then depositing the silicon containing material on the semiconductor wafer. A step of seeding the semiconductor wafer can be conducted by exposing the semiconducotor wafer to a germanium containing gas. A chlorine containing precursor and/or hydrogen can be introduced into the processing chamber to increase the selectivity of the silicon containing material to the underlying oxide. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

Selective hemispherical grain silicon deposition

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Haifa, Israel

Itai Bransky