Sumitomo Electric Industries, Limited

Issei Satoh

Hideaki Nakahata

Yoshiyuki Yamamoto

Michimasa Miyanaga

Shinsuke Fujiwara

Koji Uematsu

Yuki Seki

Naho Mizuhara

Keisuke Tanizaki

Takashi Sakurada

Masashi Yoshimura

Hideki Matsubara

Yoshiki Nishibayashi

Hitoshi Sumiya

Hisao Takeuchi

Yutaka Kobayashi

Fumitake Nakanishi

Ryo Toyoshima

Satoshi Arakawa

Minori Teramoto

Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I/Ibetween an intensity Iof a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity Iof a peak which appears at an energy of 412±2 eV is less than 1.5.

Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond

A gallium arsenide single crystal substrate having a main surface, in which a ratio of the number of As atoms existing as diarenic trioxide to the number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectroscopy, in which an X-ray having energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°. Arithmetic average roughness (Ra) of the main surface is less than or equal to 0.3 nm.

Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate

A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5&#xd7;10K. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.

Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Method of manufacturing GaN-based film and composite substrate used therefor

SiCAlNcrystals in a mixed crystal state are formed. A method for manufacturing an easily processable SiCAlNsubstrate, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer are provided. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer(0&#x3c;v&#x3c;1, 0&#x2266;w&#x3c;1, 0&#x3c;x&#x3c;1, and 0&#x3c;v+w+x&#x3c;1) is then grown on the Si substrateby a pulsed laser deposition method.

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A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.

Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method

There are provided a SiCAlNsubstrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof. A method for manufacturing a SiCAlNsubstrate according to the present invention includes the steps of preparing a different type of substrateand growing a SiCAlNlayer having a main surface on the different type of substrate. The component ratio x+v at the main surface of the SiCAlNlayer is 0&#x3c;x+v&#x3c;1. The component ratio x+v increases or decreases monotonically from the interface between the SiCAlNlayer and the different type of substrateto the main surface of the SiCAlNlayer. The component ratio x+v at the interface between the SiCAlNlayer and the different type of substrateis closer to that of the material of the different type of substratethan the component ratio x+v at the main surface of the SiCAlNlayer.

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Method of manufacturing GaN-based film

A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.

Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus () is furnished with a crucible (), a heating unit (), and a covering component (). The crucible () is where, interiorly, source material () is disposed. The heating unit () is disposed about the outer periphery of the crucible (), where it heats the crucible () interior. The covering component () is arranged in between the crucible () and the heating unit (). The covering component () includes a first layer () formed along the side opposing the crucible (), and made of a metal whose melting point is higher than that of the source material (), and a second layer () formed along the outer periphery of the first layer (), and made of a carbide of the metal that constitutes the first layer ().

Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal

A compound semiconductor single-crystal manufacturing device () is furnished with: a laser light source () making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel () having a laser entry window () through which the laser beam output from the laser light source () can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate () where sublimed source material is recrystallized; and a heater () making it possible to heat the starting substrate (). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate ().

Compound semiconductor single-crystal manufacturing device and manufacturing method

There are provided a method for manufacturing a SiCAlNsubstrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer (0&#x3c;v&#x3c;1, 0&#x3c;w&#x3c;1, 0&#x3c;x&#x3c;1, and 0&#x3c;v+w+x&#x3c;1) is then grown on the Si substrate at a temperature below 550&#xb0; C.

Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film () contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (), the AlN thin film () is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.

Thin film of aluminum nitride and process for producing the thin film of aluminum nitride

A method of producing an AlGaN (0&#x3c;x&#x2266;1) single crystal of the present invention is directed to growing an AlGaN single crystal by sublimation. The method includes the steps of preparing an underlying substrate, preparing a raw material of high purity, and growing an AlGaN single crystal on the underlying substrate by sublimating the raw material. At the AlGaN single crystal, the refractive index with respect to light at a wavelength greater than or equal to 250 nm and less than or equal to 300 nm is greater than or equal to 2.4, and the refractive index with respect to light at a wavelength greater than 300 nm and less than 350 nm is greater than or equal to 2.3, measured at 300K.

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Itami, Japan

Issei Satoh