Merck Patent Gmbh

Az Electronic Materials USA Corp.

Az Electronic Materials (luxembourg) S.a.r.l.

Issei Sakurai

Toshiya Okamura

Takashi Kanda

Hiroyuki Aoki

Bertram Bernd Barnickel

Kensuke Aida

Kazuya Arima

Bernd Bertram Barnickel

To provide a low dielectric constant siliceous film manufacturing composition capable of forming a low dielectric constant siliceous film with dispersed pores having excellent mechanical properties and stable electrical properties. [Means] The present invention provides a low dielectric constant siliceous film manufacturing composition comprising: a polysiloxane, a pore-generating material, a condensation catalyst generator, and a solvent.

Low dielectric constant siliceous film manufacturing composition and methods for producing cured film and electronic device using the same

[Problem] To provide a perhydropolysilazane making it possible to form a siliceous film with minimal defects, and a curing composition comprising the perhydropolysilazane. [Means for Solution] The present invention provides a perhydropolysilazane having a weight-average molecular weight of 5,000 to 17,000, characterized in that whenH-NMR of a 17% by weight solution of said perhydropolysilazane dissolved in xylol is measured, the ratio of the amount of SiHbased on the aromatic ring hydrogen content of the xylol is 0.235 or less and the ratio of the amount of NH based on the aromatic ring hydrogen content of the xylol is 0.055 or less, and a curing composition comprising the perhydropolysilazane. The present invention also provides a method for forming a siliceous film, comprising coating the curing composition on a substrate and heating.

Perhydropolysilazane, composition containing same, and method for forming silica film using same

The present invention provides an etching solution less affected by trench structures and also provides an isolation structure-formation process employing the solution. The etching solution contains hydrofluoric acid and an organic solvent. The organic solvent has a &#x3b4;H value defined by Hansen solubility parameters in the range of 4 to 12 inclusive and the saturation solubility thereof in water is 5 wt % or more at 20&#xb0; C. This solution can be adopted instead of known etching solutions used in conventional production processes of semiconductor elements.

Etching solution and trench isolation structure-formation process employing the same

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Kakegawa, Japan

Issei Sakurai