Robert Boschgmbh

Isolde Simon

Heribert Weber

Michael Arndt

Andreas Scheurle

Michael Knauss

Michael Bauer

Raschid Baraki

Heinz Nedelmann

Vitaliy Kondrashov

Martin Lapisa

Bernd Klein

Melissa Delheusy

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

Bonding pad layer system, gas sensor and method for manufacturing a gas sensor

A sensor module having a heating structure and a sensor element is described. The heating structure surrounds the sensor element so that heat dissipation through a frame is largely prevented. This yields a greater measuring accuracy of the sensor module. In particular, interfering influences due to a temperature dissipation through the mount frame are thereby prevented.

Sensor module having a sensor element surrounded by a heating element

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Kusterdingen, Germany

Isolde Simon