Akrion, LLC

Akrion Systems, LLC

Naura Akrion, Inc.

Akrion Technologies, Inc.

Ismail Kashkoush

Richard Novak

Gim-Syang Chen

Dennis Nemeth

Hanjoo Lee

Zhi (Lewis) Liu

Jennifer M Rieker

Larry Myland

Tom Mancuso

Zhi Lewis Liu

Nick Yialamas

Chang Kuo

Thomas Nolan

Jim Bottos

Jim Vadimsky

Richard Ciari

Timothy J Helmer

Gregory Skibinski

The variability of an etchant concentration in an immersion processes for treatment of semiconductor devices can be significantly lowered by continuously measuring the conductivity of an etchant solution and comparing against predetermined thresholds. The etchant concentration can be maintained by a feed and bleed process based on conductivity measurements of the etchant solution and the conductivity measurements being correlated with premeasured pH values of an etchant solution.

Correlation between conductivity and pH measurements for KOH texturing solutions and additives

A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a silicon-based device layer and sacrificial porous silicon sandwiched therebetween. The composite wafer is treated to an aqueous etchant maintained below ambient temperatures to selectively etch the sacrificial porous silicon and release or undercut the silicon-based layer from the single crystal silicon wafer. The released silicon device layer is attached to a substrate to make a solar cell and the released single crystal silicon wafer is reused to make additional silicon device layer.

Method for selective under-etching of porous silicon

A system for drying a surface of a substrate is provided. The system for drying a surface of a substrate comprising: a rotary support; a first dispenser fluidly coupled to a source of liquid, the first dispenser positioned above the surface of the substrate so as to be capable of applying a film of the liquid to the surface of the substrate; a second dispenser fluidly coupled to a source of drying fluid with a supply line, the second dispenser positioned above the surface of the substrate so as to be capable of applying the drying fluid to the surface of the substrate; and a proportional valve operably coupled to the supply line between the second dispenser and the source of drying fluid, the proportional valve capable of being incrementally adjusted from a closed position to an open position.

Systems and methods for drying a rotating substrate

A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting

A method of drying a surface of a substrate is provided. The method includes supporting a substrate; rotating the substrate about a rotational center point; applying a liquid to the substrate via a liquid dispenser; applying a drying fluid to the substrate via a drying fluid dispenser; moving the drying fluid dispenser and the liquid dispenser in a direction toward an edge region of the substrate, the drying fluid being applied closer to the rotational center point than the fluid; upon the liquid being applied to the edge region of the substrate, discontinuing application of the liquid while continuing the manipulation of the drying fluid dispenser; and upon the drying fluid being applied to the edge region of the substrate, continuing to apply the drying fluid for a predetermined period of time.

A method of manufacturing a solar cell wherein a pre-cleaning step is completed prior to a saw damage removal step and prior to texturization, thereby resulting in the subsequently formed textured surface to have a more homogeneous textural morphology. In one aspect, the invention is a method comprising: a) applying a pre-cleaning solution to an as-cut surface of a crystalline silicon substrate to remove surface contaminants, thereby converting the as-cut surface to a pre-cleaned surface, the as-cut surface formed by a sawing process to create the crystalline silicon substrate; b) applying a first etching solution to the pre-cleaned surface to remove physical damage caused during the sawing process, thereby converting the pre-cleaned surface into a prepared surface; c) applying a second etching solution to the prepared surface to texturize the prepared surface, thereby converting the prepared surface into a texturized surface; and d) forming at least one solar cell on the texturized surface of the crystalline silicon substrate.

Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology

A system of drying a surface of a substrate is provided. The system includes a rotary support for supporting a substrate; and an assembly comprising a first dispenser, a second dispenser, and a third dispenser, the assembly positioned above the surface of the substrate, the second and third dispensers positioned on the assembly adjacent to and in contact with one another and spaced from the first dispenser, the second dispenser having an opening that is larger than an opening of the third dispenser, and the second dispenser being located between the first and third dispensers; and means for translating the assembly generally parallel to the surface of the substrate.

A system (FIG.) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (), dispense lines (), feed lines (), a recirculation line (), a process controller (), a concentration sensor (), a particle counter (), and a bleed line (). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

System and method for selective etching of silicon nitride during substrate processing

A method of drying a surface of a substrate is provided. The method includes supporting and rotating a substrate; applying a liquid to the substrate surface at or near a rotational center point via a liquid dispenser (so that a film of the liquid is formed on the surface); applying a drying fluid to the substrate surface at a predetermined distance from the rotational center point via one or more drying fluid dispensers; and manipulating the drying fluid dispenser(s) so that the location at which the drying fluid is applied to the substrate is moved in a direction toward the rotational center point, while at the same time manipulating the liquid dispenser so that the location at which the liquid is applied to the substrate is moved in a direction outward from the rotational center point. The liquid dispenser and drying fluid dispenser(s) noted above can be located on and/or within an assembly. The assembly can include a first dispenser, a second dispenser, and a third dispenser. The first dispenser supplies liquid while the second and third dispensers supply drying fluid, where the second dispenser has a larger opening than the third dispenser. The second and third dispensers are positioned on the assembly next to one another and spaced from the first dispenser. Further, the second dispenser is located between the third dispenser and the first dispenser, such that the first dispenser is capable of linearly leading the second and third dispensers during movement.

A method and system for supplying an ultra-pure fluid to a substrate process chamber using point-of-use filtration and purification. The method and system provide ability to automatically monitor and control contamination levels in fluids in real time and to stop substrate processing when contamination levels exceed predetermined thresholds. In one aspect, the invention is a system comprising: a fluid supply line adapted to supply a fluid to the process chamber; filtration means operably coupled to the fluid supply line for removing positively and negatively charged particles from the fluid prior to the fluid passing into the process chamber; a purifier operably coupled to the fluid supply line in series with the filtration means for removing ionic contaminants from the fluid prior to the fluid passing into the process chamber; sensor means for repetitively measuring particle and ionic impurity levels in the fluid that has passed through the filtration means and the purifier, the sensor means producing signals indicative of the measured particle and ionic impurity levels; a controller electrically coupled to the sensor means for receiving the signals created by the sensor means, the controller adapted to respectively compare the measured particle level and the measured ionic impurity level indicated by the signals to a predetermined particle threshold and a predetermined ionic impurity threshold, wherein upon the controller determining that either the measured particle level is above the predetermined particle threshold and/or that the measured ionic impurity level is above the predetermined ionic impurity threshold, the controller further adapted to (1) activate means to alert a user, (2) cease processing of substrates in the process chamber, and/or (3) prohibit processing of substrates in the process chamber.

System and method for point-of-use filtration and purification of fluids used in substrate processing

A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing

A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor. In yet another aspect, the invention is a system for supplying a gas-liquid vapor to a process tank comprising: the apparatus of the present invention; gas supply means adapted to supply the gas to the tube; liquid supply means adapted to supply the liquid to the chamber; and gas-liquid transport means adapted to carry the gas-fluid vapor from the apparatus to the process tank.

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Orefield, PA, United States of America

Ismail Kashkoush