Applied Materials, Inc.

Ishing Lou

Li-Qun Xia

Rong Pan

Ping Xu

Peter Wai-Man Lee

Jia Lee

Paul Edward Gee

Francimar Campana

Cary Ching

A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

Fluorine-containing layers for damascene structures

A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.

Method of forming phosphosilicate glass having a high wet-etch rate

Growing community of inventors

Santa Clara, CA, United States of America

Ishing Lou