Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi-Ge Nuclear Energy, Ltd.

Other

Oki Electric Industry Co., Ltd.

Nec Corporation

Hitachi Vlsi Engineering Corp.

Hitachi Ulsi Engineering Corp.

Hitachi Tohbu Semiconductor, Ltd.

Isao Yoshida

Masatoshi Morikawa

Takeaki Okabe

Mineo Katsueda

Shuji Ikeda

Yutaka Hoshino

Shiro Kamohara

Tomoyuki Miyake

Megumi Kawakami

Kozo Sakamoto

Toru Fujioka

Yoshikuni Matsunaga

Yoshio Nonaka

Osamu Kagaya

Kenji Sekine

Masahiro Koike

Akira Nishimizu

Shikayuki Ochi

Minoru Nagata

Tetsuo Iijima

Kazutoshi Ashikawa

Mitsuo Ito

Kouzou Sakamoto

Shigeo Ohtaka

Masatomo Furumi

Nobuyuki Sugii

Katsuyoshi Washio

Osamu Minato

Naoyuki Kono

Motoyuki Nakamura

Toyomasa Koda

Akihiro Taki

Hidefumi Ito

Masafumi Imai

Hideki Tsunoda

Kenichi Otani

Ryoichi Hori

Hiroyuki Nakano

Toshihiko Shimizu

Takeshi Tokuyama

Yoshio Sakai

Jun Etoh

Makoto Ohkura

Toshiaki Masuhara

Tetsuaki Adachi

Takahide Ikeda

Yasuo Wada

Hiroaki Nambu

Tetsuya Matsui

Nobuyoshi Natsuaki

Masanobu Miyao

Hisayuki Higuchi

Hiroo Masuda

Masao Hotta

Shigeru Nishimatsu

Hideaki Kato

Terumi Sawase

Kunihiko Yamaguchi

Masayoshi Kobayashi

Hisao Katto

Masao Tamura

Masaaki Nakai

Masahiro Miki

Hidetoshi Inoue

Hisashi Endo

So Kitazawa

Takashi Tokuyama

Noriyuki Honma

Akio Hoshi

Toru Toyabe

Masatoshi Kimura

Tsutomu Katsuyama

Masaru Takeuchi

Yukihiro Sato

Hirofumi Ouchi

Kanji Arai

Kenichi Nagura

Kazuo Hoya

Shigeo Otaka

Yasunobu Taguchi

Soushi Narishige

Taiichiro Yamada

Harutora Shono

Ken Uchid

Yasuo Maruyama

Hidefumi Itoh

Yukio Shirota

Toyoo Kanai

Kouichiro Satonaka

Chihiro Matsuoka

Mio Shindo

To realize an object of providing an eddy current inspection device which is able to control a sensitivity decrease, and is able to reliably detect a defect. An eddy current inspection device of the present invention is provided with an orthogonal detection mode which measures an electromotive force signal using a coil pair which is configured by two coils within the first row coil group, a first intersection detection mode which measures the electromotive force signal using the first coil pair which is configured by the two coils within the first row and second row coil groups that are lined up in a direction which intersects with the scanning direction, and a second intersection detection mode which measures the electromotive force signal using the second coil pair which is configured by the two coils within the first row and second coil groups that are lined up in a direction in which a direction which intersects with the scanning direction is on the same side as the direction through which the first coil pair intersects and has a larger coil pair intersection angle than the coil pair intersection angle of the first coil pair.

Eddy current inspection device

An eddy current flaw detection system includes an eddy current flaw detection probe having a substrate facing an inspection surface, and at least one exciting coil and at least two detecting coils provided on the substrate, a scanning device which scans the probe on the inspection surface, a scan control device which drives and controls the scanning device, an eddy current flaw detection device which acquires results of detection of a plurality of detection points corresponding to combinations of the exciting and detecting coils for each scan position of the probe, and a data processing/display device which processes data from the scan control device and the eddy current flaw detection device and thereby displays a result of flaw detection. The data processing/display device acquires three-dimensional coordinates of the detection points for each scan position of the probe and thereby creates three-dimensional flaw detection data.

Eddy current flaw detection system and eddy current flaw detection method

In an ultrasonic inspection method or ultrasonic inspection system in which an ultrasonic wave is propagated to an test object via a medium such as a liquid or a gas, an incident position of the ultrasonic wave is accurately and reliably identified. In an ultrasonic inspection method based on an immersion technique, an optical irradiator is mounted on an ultrasonic wave transmitting/receiving unit, an optical marker is irradiated from the optical irradiator to the test object, and an irradiated position of the optical marker is imaged using imaging equipment in order to perform inspection.

Ultrasonic inspection system and ultrasonic inspection method

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs(P) for leading out electrodes on a source region, a drain regionand leach-through layers(), to which a first layer wirings(M) are connected and, further, backing second layer wiringstoare connected on the conductor plugs(P) to the first layer wirings(M).

Semiconductor device including a power MISFET

The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface.

Method and apparatus for evaluating length of defect in eddy current testing

Semiconductor device including a power MISFET and method of manufacturing the same

Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate

An eddy current testing probe has a flexible substrate adapted to face to a surface of a test article, a plurality of coils which are fixed to the flexible substrate and energized one of which is capable of being changed sequentially, a pressing member for pressing the substrate toward the test article, an elastic member arranged between the substrate and the pressing member, and a movement limiting member for limiting a movement of the pressing member toward the test article.

Eddy current testing probe and eddy current testing apparatus

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs(P) for leading out electrodes on a source regiona drain regionand leach-through layers(), to which a first layer wirings(M) are connected and, further, backing second layer wiringstoare connected on the conductor plugs(P) to the first layer wirings(M).

Power mosfet having conductor plug structured contacts

In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.

Field-effect type semiconductor device for power amplifier

In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

Mobile telephone apparatus

It is to be made possible to eliminate unevenness of the inductances of bonding wires and to reduce the size of semiconductor devices. Over the surface of a semiconductor device in whose MISFET formation area a MISFET comprising a plurality of unit MISFETs connected in parallel, gate electrode pads electrically connected to the gate electrode of the MISFET and drain electrode pads electrically connected to the drain electrode of the same are arranged in a row each. The intervals of the gate electrode pads become gradually shorter from the end areas towards the central area of the electrode array of the gate electrode pads. The intervals of the drain electrode pads also become gradually shorter from the end areas towards the central area of the electrode array of the drain electrode pads.

Semiconductor device

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs (P ) for leading out electrodes on a source region , a drain region and leach-through layers ( ), to which a first layer wirings (M ) are connected and, further, backing second layer wirings to are connected on the conductor plugs (P ) to the first layer wirings (M ).

Semiconductor device and method of manufacturing the same

Growing community of inventors

Hinode, Japan

Isao Yoshida