Sumitomo Chemical Company, Limited

Fujitsu Corporation

Isao Yahagi

Masato Ueda

Makoto Kitano

Fumi Yamaguchi

Keiji Watanabe

Miwa Kozawa

Shoichi Suda

Michitaka Morikawa

Yasunori Uetani

Hiroshi Moriuma

Takenori Osada

Yasuaki Abe

Manabu Sasaki

Yukio Fujii

An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid.

Electronic device insulating layer, and method for producing electronic device insulating layer

Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: 

Electronic device insulating layer material capable of forming an insulating layer at low temperature

An object of the invention is to provide an organic thin film transistor insulating layer material which can be used to produce organic thin film transistors having a small absolute value of threshold voltage and low hysteresis. The solution to the problem is an organic thin film transistor insulating layer material including a macromolecular compound (A) which contains a repeating unit having a cyclic ether structure and a repeating unit having an organic group capable of being detached by an acid.

Organic thin-film transistor insulating layer material

An object of the present invention is to provide an organic thin film transistor a gate insulating film of which can be formed at a low temperature. The organic thin film transistor of the present invention includes a source electrode, a drain electrode, an organic semiconductor layer which becomes a current path between the source electrode and the drain electrode, a gate electrode which controls an electric current passing through the current path, and an insulating layer which insulates the organic semiconductor layer from the gate electrode, wherein the insulating layer is formed of a cured substance of a composition containing a first compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat, and a second compound having two or more active hydrogen groups in the molecule, where at least one of the first compound and the second compound is a polymer compound.

Organic thin film transistor, method for manufacturing the same, display member using the organic thin film transistor, and display

The subject of the present invention is to provide an organic thin film transistor with a small hysteresis. The means for solving the subject is a resin composition for an organic thin film transistor gate insulating layer comprising (A) a macromolecule that comprises at least one repeating unit selected from the group consisting of repeating units represented by Formula (1), repeating units represented by Formula (1'), and repeating units represented by Formula (2) and contains two or more first functional groups in its molecule, wherein the first functional group is a functional group that generates, by the action of electromagnetic waves or heat, a second functional group that reacts with active hydrogen, and (B) at least one compound selected from the group consisting of low-molecular compounds containing two or more active hydrogens in each molecule and macromolecules containing two or more active hydrogens in each molecule.

Resin composition, gate insulating layer, and organic thin film transistor

A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 &#x3bc;m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation;   Preferably, 0.25&#x2266;a&#x2266;0.60, and 0&#x2266;c&#x2266;0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same

A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 &#x3bc;m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; Preferably, 0.25&#x2266;a&#x2266;0.60, and 0&#x2266;c&#x2266;0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

The object of the present invention is to provide resin composition for intermediate layer of a three-layer resist comprising (A) a polyorganosilsesquioxane resin having a weight-average molecular weight of from 1000 to 50000 and having two or more functional groups, which polymerize or condense at the presence of a acid, in the molecule, and (B) a compound generating an acid by electromagnetic wave or heat, and resin composition for intermediate layer of a three-layer resist, comprising (C) a polyorganosilsesquioxane resin having in the molecule a hydroxyl group and having a weight-average molecular weight of from 1000 to 50000, as resin composition for intermediate layer of a three-layer resist which, when ketone compounds, aromatic compounds and the like are used as a resist solvent, does not cause dissolution of an intermediate layer in applying an upper layer resist and does not cause formation of a mixing layer at the interface with the upper layer resist, and which shows little change by time, excellent in storage stability, and can form a hardened film without cracking.

Resin composition for intermediate layer of three-layer resist

Silicon-containing compound and organic electroluminescence device using the same

A polysilane is disclosed whose main chain skeleton has a repeating unit represented by the general formula (1): ##STR1## wherein R.sub.1 represents a substituted or unsubstituted alkyl cycloalkyl, aryl or aralkyl group; X is a atom having an unpaired electron or a group containing an atom having an unpaired electron and represents an oxygen atom, sulfer atom or a nitrogen atom-containing group represented by the general formula (2): ##STR2## wherein R.sub.2 represents a substituted or unsubstituted alkyl, cycloalkyl, aryl or aralkyl group; Ar.sub.1 represents a substituted or unsubstituted arylene group; and Ar.sub.2 represents a substituted or unsubstituted aryl group, a group having an aromatic amine skeleton or a group ethenylene skeleton; a process for producing the polysilane; and a dihalosilane which is the starting material therefor. The polysilane compound has an excellent moldability as a high polymeric material and a higher hole drift mobility as a hole transporting material.

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Ibaraki, Japan

Isao Yahagi