Mitsubishi Electric Corporation

Isao Umezaki

Yukimasa Hayashida

Shigeru Hasegawa

Ryutaro Date

Ryo Tsuda

Goro Yasutomi

A semiconductor chip () is connected to a metal pattern (). A shear drop surface () of an electrode () is bonded to the metal pattern (). A burr () is formed at an end portion of the burr surface () of the electrode (). A crushing amount of the end portion of the burr surface () is equal to or less than 10 μm.

Methods for manufacturing a semiconductor device

It is an object of the present invention to provide a semiconductor device which allows an increase in the number of semiconductor elements mounted in parallel and prevents a shape of an insulating substrate onto which the semiconductor elements are mounted, from being laterally long, and provide a semiconductor module including such semiconductor device. A semiconductor device according to the present invention includes an insulating substrate, a metal pattern which is a continuous piece and is bonded to one main surface of the insulating substrate, and a plurality of switching elements which are bonded to a surface opposite to the insulating substrate on the metal pattern, and the plurality of switching elements are arranged in a matrix of two or more rows and two or more columns on the metal pattern.

Growing community of inventors

Tokyo, Japan

Isao Umezaki