Varian Semiconductor Equipment Associates, Inc.

Isao Tsunoda

Joseph C Olson

Shengwu Chang

Donna Smatlak

Damian Brennan

Dennis P Rodier

William Bintz

Nobihiro Tokoro

The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.

Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation

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Kanagawa-ken, Japan

Isao Tsunoda