Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

Isao Tottori

Kenichi Fujie

Katsuya Tsujimoto

Masaru Hagiwara

Masazumi Matsuura

Kiyoteru Kobayashi

Naruki Suetake

Atsuhiro Fujii

The present invention is an SPI-communication-method communication apparatus that has a plurality of slave communication units for a single master communication unit and an electric power converter utilizing the communication apparatus; the master communication unit outputs communication signals simultaneously to all of the slave communication units and separately reads respective data signals outputted by the slave communication units, in accordance with a priority.

Communication apparatus

In a rotation angle detection device for detecting a rotation angle and a rotation speed of a motor generator by using a resolver, a resolver detection accuracy is improved by raising the amplitude or frequency of an excitation signal when the motor generator is performing a driving operation. Furthermore, by reducing the amplitude or frequency of the excitation signal when the motor generator is not performing a driving operation, it is possible to suppress the amount of heat generated by the excitation circuit and the resolver, while maintaining a resolver detection accuracy that enables information about the rotation speed of the motor generator to be obtained.

Rotation angle detection device and rotation angle detection method

A CPU outputs digital data from a built-in RAM to a buffer in response to a request from the buffer. The buffer has a FIFO configured of a plurality of stages, each stage of the FIFO is capable of storing one unit (10 bits) of digital data, the buffer as a whole is capable of storing digital data in number of units equivalent to the number of configured stages. A register captures digital data stored inside the buffer by each unit in synchronous with an output control clock. The digital data stored in the register is outputted to a parallel DAC as data for D/A conversion. A WR signal output timer generates a writing control signal having one shot pulse of 'L' in synchronous with the output control clock.

Parallel data output control circuit and semiconductor device

On a silicon oxide film covering a gate electrode portion, a reflowed and polished BPSG film is formed. A second interconnection layer is formed on the BPSG film. To cover the second interconnection layer, a silicon oxide film having a thickness of at least the substantial thickness of the second interconnection layer is formed on a silicon oxide film. Thus, the planarity of the base of the interconnection layer is ensured and displacement of the interconnection layer is suppressed. Accordingly, a semiconductor device having a high degree of integration is obtained.

Method of manufacturing a semiconductor device

A semiconductor device with a multi-level interconnection structure has a first conductive layer disposed below a fuse, and formed in the same layer as the first metal wire as a component of multi-level interconnects, and a second conductive layer disposed below the fuse and formed in the same layer as the second metal wire as a component of the multi-level interconnects. A laser beam control unit is configured with the first and second conductive layers. Thus, damage occurrence in a semiconductor substrate may be controlled during blowing the fuse, a quality deterioration and further a defective of the semiconductor device may be not only avoided, but also an integration degree thereof may be enhanced.

Semiconductor device with a multi-level interconnection structure

Semiconductor device having smooth surface for suppressing layer displacement

A polycrystalline silicon film is formed on the surface of a semiconductor substrate. An oxide film having a first impurity concentration is formed to cover the polycrystalline silicon film. A polycrystalline silicon film and a refractory metal silicide are formed on the surface of the oxide film having the first impurity concentration. An oxide film having a second impurity concentration higher than the first impurity concentration is formed to cover the polycrystalline silicon film and the refractory metal silicide. The third conductive layer is formed on the surface of the oxide film having the second impurity concentration.

Semiconductor device with improved planarization properties

It is an object of the present invention to provide a method capable of performing surface treatment of a plurality of semiconductor substrates at one time and treating them uniformly with high selectivity. A plurality of semiconductor substrates having interlayer insulating films thereon are prepared. The plurality of semiconductor substrates are arranged in a vertical direction at predetermined intervals in a reaction chamber so that one face of each faces upwards and the other face of each faces downwards. Etching gas for etching the surfaces of the interlayer insulating films is sent into the reaction chamber in a direction vertical to the surfaces of said semiconductor substrates under low pressure.

Method of treating surface of semiconductor substrate

An ozone generating method for increasing the quantity of ozone produced by a silent discharge in high purity oxygen includes mixing nitrogen with the high purity oxygen in a predetermined ratio. The nitrogen gas is a catalyst for stable and highly efficient ozone generation from a high purity oxygen source.

Growing community of inventors

Tokyo, Japan

Isao Tottori