Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Isao Takenaka

Shou Matsumoto

Masaki Tada

Shogo Yanase

Takayuki Oshima

In a high-frequency module, a plurality of filters are connected to a first switch. A plurality of amplifiers are connected to a second switch. A first inductor is disposed on a common path between a second common terminal of the second switch and a first common terminal of the first switch. A plurality of second inductors are disposed, on a one-to-one correspondence, in sections different from the common path, the sections being included in the plurality of respective signal paths. The first inductor is a surface mount inductor located on a first main surface of a mounting substrate. The plurality of second inductors are each an inductor disposed within an IC chip including the plurality of amplifiers or an inductor including a conductive pattern formed in or on the mounting substrate.

High-frequency module and communication apparatus

To provide a radio frequency module and a communication device capable of achieving reduction in height. The radio frequency module includes a mounting substrate and one or more chip inductors. The mounting substrate has a recess at least one end of both ends in a second direction orthogonal to a first direction that is a thickness direction of the mounting substrate. A second chip inductor that is at least one chip inductor of the one or more chip inductors is disposed in the recess.

Radio frequency module and communication device

Desired characteristics can be achieved. A radio-frequency circuit includes an inductor and a switch. The inductor has a first end and a second end. The switch has a first input-output terminal, a second input-output terminal, a first switching terminal coupled to the first end of the inductor, and a second switching terminal coupled to the second end of the inductor. The switch can switch between a first state and a second state. In the first state, the first input-output terminal is coupled to the first switching terminal, and the second input-output terminal is coupled to the second switching terminal. In the second state, the first input-output terminal is coupled to the second switching terminal, and the second input-output terminal is coupled to the first switching terminal.

Radio-frequency circuit and communication device

A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.

Power amplifier module, frontend circuit, and communication device

Isolation characteristics of a directional coupler are improved. A high-frequency module () includes a substrate () and a directional coupler () provided on the substrate (). The directional coupler () includes a main line (), a sub line (), and an impedance adjustment portion (). The sub line () is electromagnetically coupled to the main line (). The impedance adjustment portion () is provided in the sub line (), and adjusts impedance of the directional coupler (). The impedance adjustment portion () is electrically connected to an inductor of the substrate ().

High-frequency module

A radio frequency module includes: a plurality of external connection terminals including at least one input terminal and at least one output terminal; at least one power amplifier; at least one low-noise amplifier; a first switch connected between the at least one input terminal and the at least one power amplifier; a second switch connected between the at least one output terminal and the at least one low-noise amplifier; and a module substrate including a first principal surface and a second principal surface on opposite sides of the module substrate. The first switch is disposed on one of the first principal surface and the second principal surface, and the second switch is disposed on the other of the first principal surface and the second principal surface.

A demultiplexing apparatus according to the present disclosure includes an amplifier that amplifies transmission signals in three or more communication bands having different frequency bands; multiple signal paths which are commonly provided for an output terminal of the amplifier and on which the signals in the corresponding communication bands are propagated; and multiple transmission-reception filters which are provided on the multiple signal paths, and each of which isolates a transmission signal and a reception signal of the corresponding communication band from each other. The gains of the amplifier in the frequency bands of multiple reception signals are smaller than the gains of the amplifier in the frequency bands of multiple transmission signals.

Demultiplexing apparatus and method of designing the apparatus

A high-frequency front-end circuit includes a communication band selection circuit, a high-frequency processing circuit, and a multi-band amplifier. The multi-band amplifier amplifies high-frequency signals in a plurality of communication bands. The communication band selection circuit is connected an output end of the multi-band amplifier. The communication band selection circuit includes a communication band selection switch. The high-frequency processing circuit is connected between a first connection line connecting the multi-band amplifier and the communication band selection circuit and a ground potential. The high-frequency processing circuit includes a passive element and an impedance selection switch. The passive element is connected between the first connection line and the ground potential. A first terminal of the impedance selection switch is connected to a second connection line connecting the passive element and the first connection line, and a second terminal of the impedance selection switch is connected to the ground potential.

High-frequency front-end circuit

A high-frequency front end circuit includes an antenna terminal, a reception circuit that is directly or indirectly connected to the antenna terminal, and a transmission circuit that is directly or indirectly connected to the antenna terminal, wherein the transmission circuit has an amplification circuit, the amplification circuit includes an input terminal and an output terminal, an amplification element provided on a path connecting the input terminal and the output terminal, and a bias circuit having an LC resonance circuit and connected to between the amplification element and the output terminal. A frequency pass band of the transmission circuit is lower than a frequency pass band of the reception circuit, and a value of a resonant frequency of the bias circuit is smaller than a value of a frequency pass band width of the transmission circuit.

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Kyoto, Japan

Isao Takenaka