Kabushiki Kaisha Toshiba

Isao Takasu

Atsushi Wada

Yuko Nomura

Kohei Nakayama

Fumihiko Aiga

Satomi Taguchi

Rei Hasegawa

Shintaro Enomoto

Yukitami Mizuno

Mitsuyoshi Kobayashi

Tomoaki Sawabe

Isao Amemiya

Tomio Ono

Tomoko Sugizaki

Shuichi Uchikoga

Hyangmi Jung

Tsuyoshi Hioki

Keiji Sugi

Kenichi Mori

Kazuhide Abe

Yasushi Shinjo

Go Kawata

Naoto Kume

Sara Yoshio

Miho Yoda

Hideyuki Funaki

Takashi Miyazaki

Yoshinori Iida

Honam Kwon

Hitoshi Nagato

Akiko Hirao

Akio Amano

Hitoshi Yagi

Yuki Nobusa

Yasushi Shinjiyo

Ryoko Iida

Takashi Kaneko

Shinjiro Aono

According to one embodiment, a detector includes an element portion. The element portion includes a first detection portion and a wiring portion. The first detection portion includes a first electrode, a first counter electrode, and a first organic semiconductor layer. At least a part of the first organic semiconductor layer is between the first electrode and the first counter electrode. The wiring part includes a first electrode layer electrically connected with the first electrode, a first counter electrode layer electrically connected with the first counter electrode, and a first conductive layer. The first counter electrode layer is between the first electrode layer and the first detection portion in a first direction from the first electrode layer to the first counter electrode layer. The first conductive layer is between the first electrode layer and the first counter electrode layer in the first direction.

Detector having an element portion including an organic semiconductor layer and a wiring portion

According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.

Radiation detector

According to one embodiment, a scintillator includes a first layer. The first layer includes a first organic substance capable of emitting light, and a second organic substance. The second organic substance includes at least one selected from the group consisting of a carbonyl group, phosphine oxide, and a sulfinyl group. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns.

Scintillator and radiation detector

According to one embodiment, a radiation detector includes a first conductive layer including a first conductive region, and a first stacked body. The first stacked body includes a first electrode separated from the first conductive region in the a direction, a first scintillator layer provided between the first conductive region and the first electrode, a first intermediate electrode provided between the first scintillator layer and the first electrode, and a first organic semiconductor layer provided between the first intermediate electrode and the first electrode.

According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.

According to one embodiment, a photodetector includes a first conductive layer, a second conductive layer, and an organic layer provided between the first conductive layer and the second conductive layer. The organic layer includes a first region and a second region. The second region is provided between the first region and the second conductive layer. The first region includes a first compound and a second compound. The first compound includes a first mother skeleton. The second region includes the first compound and a third compound. The third compound includes the first mother skeleton. The third compound is different from the first compound. The second region does not include the second compound, or a concentration of the second compound in the second region is lower than a concentration of the second compound in the first region.

Photodetector and radiation detector

According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.

According to one embodiment, a radiation detector includes first and second resin members, a detection part, a wiring part, and a controller. The first resin member includes first and second partial regions, and a third partial region between the first and second partial regions. The second resin member includes fourth and fifth partial regions. The detection part is provided between the first and fourth partial regions. The detection part includes a first conductive layer, a second conductive layer provided between the first conductive layer and the fourth partial region, and an organic semiconductor layer provided between the first and second conductive layers. The wiring part is provided between the third and fifth partial regions. The wiring part includes first and second wiring layers. The controller is fixed to the second partial region. The controller is electrically connected with the first and second wiring layers.

According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.

According to one embodiment, a radiation detector includes a first layer, a first light-emitting part, a detecting part, a detection circuit, and a first drive circuit. The first layer includes a first organic material. The first light-emitting part includes a first organic light-emitting layer. The detecting part is provided between the first layer and the first light-emitting part. The detecting part includes an organic photoelectric conversion layer and is configured to generate an electrical signal corresponding to radiation incident on the first layer. The detection circuit is configured to output a detection signal based on the electrical signal. The first drive circuit is configured to supply a first drive signal to the first light-emitting part based on the detection signal.

Radiation detector, radiation irradiation device, and radiation method

A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

Radiation detector and radiation detection method

According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

Photoelectric conversion element and radiation detector

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Detection element and detector

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

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Setagaya, Japan

Isao Takasu