Japan Display Inc.

Hitachi, Ltd.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Tokyo Institute of Technology

Japan Dispaly Inc.

Isao Suzumura

Yohei Yamaguchi

Hidekazu Miyake

Akihiro Hanada

Hajime Watakabe

Arichika Ishida

Hiroto Miyake

Ryo Onodera

Norihiro Uemura

Toshihide Jinnai

Fumiya Kimura

Kazufumi Watabe

Yoshinori Ishii

Takeshi Noda

Hirokazu Watanabe

Marina Mochizuki

Katsuya Oda

Tomoyuki Ito

Toshinari Sasaki

Hitoshi Tanaka

Toshiki Kaneko

Katsuyoshi Washio

Kazuhide Mochizuki

Mieko Matsumura

Kenichi Akutsu

Marina Shiokawa

Atsuko Shimada

Takahiro Ochiai

Mutsuko Hatano

Daisuke Sonoda

Nobuyuki Sugii

Takumi Sano

Junichi Hanna

Masatoshi Wakagi

Etsuko Nishimura

Kenichi Onisawa

Yoshiaki Toyota

Masayoshi Fuchi

Junko Nagasawa

Makoto Miura

Masahiro Watabe

Akiko Kagatsume

Atsuko Imoto

Ryotaro Kimura

A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Display device and semiconductor device

A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.

Semiconductor device

The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a Player from being generated and a metal wiring installed over the Player from coming down while securing the electrical conductivity of the Player. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an Nlayer, an I layer, and a Player are laminated in this order; an anode electrode formed on the Player; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.

Semiconductor device and method of manufacturing semiconductor device

A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.

Display device

According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate. An electrode connected electrically to the thin film transistor is formed of a silver film. A first indium tin oxide (ITO) filmis formed on the silver film. An alumina (AlOx) filmis formed on the first ITO film

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.

According to one embodiment, a sensor device includes an insulating base including a meandering strip-shaped portion and an island-shaped portion, a first inorganic insulating film on the island-shaped portion, a first wiring layer on the first inorganic insulating film, a second inorganic insulating film on the first wiring layer, a second wiring layer on the second inorganic insulating film, an organic insulating film on the second wiring layer, a barrier film covering the organic insulating film, a sensor element on the barrier film, and a sealing film covering the sensor element. The barrier film covers side surfaces of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film.

Sensor device

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor. An oxide filmas an insulating material is formed on the oxide semiconductor. A gate electrodeis formed on the oxide film. A first electrodeis connected to a drain of the first TFT via a first through hole formed in the oxide film. A second electrodeis connected to a source of the first TFT via a second through hole formed in the oxide film

A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductoris covered by a first insulating film, a first drain electrodeis connected to the oxide semiconductorvia a first through holeformed in the first insulating film, a first source electrodeis connected to the oxide semiconductorvia second through holeformed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrodeand the first source electrode, a drain wiring connectsto the first drain electrodevia a third through holeformed in the second insulating film, a source wiringis connected to the first source electrodevia a fourth through holeformed in the second insulating film.

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Tokyo, Japan

Isao Suzumura