Toshiba Ceramics Co., Ltd.

Isao Sakashita

Kazunori Meguro

Kunio Hamaguchi

A silicon carbide material for low-melting point fusion metal composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide and containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride, and on this film or in place of this film silicon nitride and/or boron nitride is coated.

Growing community of inventors

Yamagata, Japan

Isao Sakashita