National Institute for Materials Science

Toyota Jidosha Kabushiki Kaisha

Japan Science and Technology Agency

Isao Sakaguchi

Naoki Ohashi

Hajime Haneda

Kiyoshi Shimamura

Koji Kawamoto

Encarnacion Antonia Garcia Villora

Kazunori Takada

Yukiyoshi Ueno

Yasushi Tsuchida

Mika Gamo

Toshihiro Ando

Takamasa Ishigaki

Takashi Sekiguchi

Tsuyoshi Ohnishi

Ken Watanabe

Xiaoxiong Xu

Haruki Ryoken

Yutaka Adachi

Tadashi Takenaka

Hiroyuki Taguchi

Takeshi Ohgaki

Ken Kataoka

Yoichiro Sato

Eiji Yasu

Naoki Nat Inst For Materials Science Ohashi

A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by LaGaSiO, and at least the content of the element M is insufficient for the stoichiometric composition represented by CaTaMSiO. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

Piezoelectric material, method for producing the same, piezoelectric element and combustion pressure sensor

An Object of the invention is to obtain an all solid lithium battery having an excellent output performance. To achieve the object, a sulfide based solid electrolyte is used as an electrolyte; an oxide containing lithium, a metal element that acts as a redox couple, and a metal element that forms an electron-insulating oxide is used as a cathode active material; and the concentration of the metal element that forms the electron-insulating oxide on the surface of the cathode active material (oxide) that is in contact with the sulfide solid electrolyte is made high.

All solid lithium battery

A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va&#x3c;Vb and Na&#x3e;Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.

Zinc oxide-based multilayer structural body and its producing method

The present invention relates to a zinc oxide phosphor characterized by emitting visible light with a broad emission spectrum close to white, and a process for producing the same. A powder prepared by adding a plurality of additives to zinc oxide and heat-treating the resulting mixture is further hydrogenated to improve the luminous efficiency of the zinc oxide phosphor. The zinc oxide phosphor providing a broad emission spectrum covering a wavelength range over substantially the entire visible region can be applied to a white diode, a white vacuum fluorescent display, and a fluorescent paint.

Zinc oxide phosphor, process for producing the same and light emitting device

Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

Zinc oxide resistor and its manufacturing method

A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830&#xb0; C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.

N-type semiconductor diamond and its fabrication method

Growing community of inventors

Ibaraki, Japan

Isao Sakaguchi