Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Isao Oshima

Junji Fujino

Shohei Ogawa

Takumi Shigemoto

Yoshikazu Tanaka

Atsushi Kawamura

Mitsuo Ishii

Shinichi Takagi

Kozo Harada

Yoshitaka Otsubo

Rei Yoneyama

Satoru Ishikawa

Yusuke Ishiyama

Yousuke Yamamoto

Seiichi Nagai

Kazuyoshi Hasegawa

Tadayoshi Hata

Toshitsugu Uesugi

Rena Kawahara

A first alignment resin () is formed in an annular shape on an electrode () of an insulating substrate (). First plate solder () having a thickness thinner than that of the first alignment resin () is arranged on the electrode () on an inner side of the annular shape of the first alignment resin (). A semiconductor chip () is arranged on the first plate solder (). The first plate solder () is made to melt to bond a lower surface of the semiconductor chip () to the electrode ().

Semiconductor device and power conversion device

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device

Semiconductor device, method for manufacturing semiconductor device, and power conversion device

In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.

Semiconductor device, method for manufacturing the same, and power conversion device

A semiconductor device includes a substrate, a plurality of solders, and a semiconductor chip. The plurality of solders are located adjacent to each other. At least one of composition and concentration of the plurality of solders is different from each other. The semiconductor chip includes a joining surface to be joined to the substrate with the plurality of solders. The joining surface of the semiconductor chip includes a plurality of joining areas in which heat generation of the semiconductor chip or a stress on an object to be joined is different from each other. The plurality of solders are disposed to correspond to the plurality of joining areas, respectively.

Semiconductor device

In a conventional semiconductor device, a pattern serving as a heat dissipating material is formed by applying a phase transition material. Provided is a semiconductor device that can reduce collapse of a pattern shape even if a shock is applied to the pattern formed with the phase transition material that is liquefied when the environmental temperature is not sufficiently controlled. The semiconductor device includes semiconductor elements mounted inside a semiconductor module (); a heat radiating surface (), formed in the semiconductor module (), dissipating heat generated in the semiconductor elements to a heat radiator; a pattern () formed on the heat radiating surface and made from a phase transition material; and a film () serving as a first film that covers the pattern ().

Semiconductor device and heat-conductive sheet

An optical receptacle which couples a connector ferrule in which an optical fiber is inserted and an optical semiconductor package. The optical receptacle comprises: a precise sleeve which holds the connector ferrule; a receptacle body including a connection portion connected to the optical semiconductor package, a cylindrical portion in which the precise sleeve is inserted; a partition portion located between the connection portion and the cylindrical portion; and a transparent member confined in a region between an inner end portion of the precise sleeve and the partition portion, without being fixed.

Optical assembly optically coupling an optical fiber and a semiconductor device

A stem for an optical element includes a base-like portion located on a portion of a package side surface of an eyelet, higher than the package side surface. A block is located on a surface of the base-like portion of the eyelet. An optical element mounting surface of the block projects outward, overhanging a side face of the base-like portion, close to lead electrodes which are inserted through holes of the eyelet, respectively, and sealed with sealing glass. High-frequency line substrates are located on the optical element mounting surface of the block, and Au films of the high-frequency line substrate are electrically connected to respective lead electrodes.

Stem for optical element and optical semiconductor device using the same

An optical semiconductor device used for optical information processing, such as writing information into and reading information from an optical disk. The optical semiconductor device includes a Si substrate, a light emitting element, and a reflector for reflecting light emitted from the light emitting element in a direction perpendicular to the mounting surface of the Si substrate. The reflector has a reflecting surface inclined by 45.degree. from a bottom face and formed by etching a single crystal of Si.

Growing community of inventors

Tokyo, Japan

Isao Oshima