Kabushiki Kaisha Toshiba

Isao Matsui

Osamu Yamazaki

Akio Ui

Masaki Narita

Yukimasa Yoshida

Hiroshi Fujita

Katsuaki Aoki

Toshimitsu Omine

Takashi O

Naruhiko Kaji

Yoshiaki Nakamura

A magnetic film comprises a platinum layer having a (001) plane orientation and an island-shaped iron-platinum crystalline arranged on the platinum layer and having a (001) plane orientation parallel to the (001) plane orientation of the platinum layer, wherein the island-shaped iron-platinum crystalline has a composition region consisting of 50 atomic % of each of iron and platinum and exhibits a perpendicular magnetic anisotropy having a high coercive force in a direction perpendicular to the surface of the platinum layer.

Magnetic film and method of manufacturing magnetic film

An apparatus for manufacturing fine particles includes a reactor; a first inlet part including at least one port introducing a reactive gas flow containing a fine particle source material; a second inlet part including at least one port introducing a diluting gas flow; a heater exciting the fine particle source material in the reactive gas flow; a first plate including through-holes which substantially equalize a flow rate of the reactive gas flow with respect to a cross section of a flow channel; a second plate including through-holes which substantially equalize a flow rate of the diluting gas flow with respect to a cross section of a flow channel; a gas exhaust port provided in a merging region where the reactive gas flow passed through the first plate and the diluting gas flow passed through the second plate are merged; and a collector which collects fine particles.

Method and apparatus for manufacturing fine particles

A method of manufacturing fine particles of the invention includes introducing a reactive gas flow containing a fine particle source material into a reactor from one side, growing fine particles in a gas phase by heating the fine particle source material in the reactive gas flow, introducing a diluting gas flow into the reactor from another side being almost counter-flow to the reactive gas flow, equalizing flow rates of the reactive gas flow and the diluting gas flow substantially with respect to a cross section of a flow channel, and then stopping growth of the fine particles by merging the reactive gas flow and the diluting gas flow.

A particle producing apparatus includes a reaction container, an introduction portion for introducing a source gas and a reaction inhibitor generating gas into the reaction container, an inert gas introduction portion for introducing a carrier gas into the reaction container, a heater provided on the reaction container, and an exhaust portion. The growth of particles is controlled using a particle producing reaction and a reverse reaction.

Particle producing method and particle producing apparatus

There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Semiconductor device manufacturing method

A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system

A method of supplying an excited oxygen, which comprises the steps of exciting a oxygen gas or a gas containing an oxygen atoms with plasma in a plasma discharge zone thereby forming an excited oxygen, and transferring a gas containing the excited oxygen into a reaction zone disposed next to the plasma discharge zone while keeping a pressure within the plasma discharge zone lower than that of the reaction zone. In a reaction chamber, a reaction by the excited oxygen is effected. As a result, the formation of a thin film on a substrate disposed in a reaction chamber, the etching of the substrate and the cleaning of the interior of the reaction chamber can be carried out.

Method of supplying excited oxygen

A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.

Growing community of inventors

Saitama, Japan

Isao Matsui