Sumitomo Electric Industries, Limited

Sumitomo Electric Device Innovations, Inc.

Isao Makabe

Ken Nakata

Keiichi Yui

Takamitsu Kitamura

Tsuyoshi Kouchi

Akira Furuya

Hiroyuki Ichikawa

Tsuyoshi Kouichi

A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using Has a carrier gas, and TMG and NHas raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using Has a carrier gas, the MOCVD furnace being supplied with NH, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using Nas a carrier gas, and TMI, TMA, and NHas raw materials.

Method for manufacturing nitride semiconductor device

A process of forming a semiconductor device primarily made of nitride semiconductor materials is disclosed. The process includes steps of: (a) growing a semiconductor stack including a channel layer and a barrier layer sequentially on a substrate, where the channel layer is made of gallium nitride (GaN); (b) patterning a mask on the barrier layer; (c) etching a portion of the barrier layer and a portion of the channel layer with the mask to form a recess in the semiconductor stack; and (d) growing a contact layer selectively within the recess with nitrogen (N) used as a carrier gas at a maximum temperature of 1000&#xb0; C.

Process of forming nitride semiconductor device

A process of forming a high electron mobility transistor (HEMT) with a reverse arrangement for the barrier layer and the channel layer thereof is disclosed. The process includes steps of epitaxially growing an oxide layer containing zinc (Zn) on a substrate where the oxide layer shows an O-polar surface; epitaxially growing a semiconductor stack made of nitride semiconductor materials on the oxide layer where the semiconductor stack includes a nitride semiconductor layer, a barrier layer and a channel layer on the oxide layer in this order; attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride semiconductor layer; and removing the temporal substrate from the semiconductor stack.

Process of forming epitaxial substrate having N-polar gallium nitride

A process of forming a High Electron Mobility Transistor (HEMT) made of nitride semiconductor materials is disclosed. The process sequentially grows a buffer layer, a n-type layer doped with n-type dopants, and a channel layer by a metal organic chemical vapor deposition (MOCVD) technique. A feature of the process is to supply only an n-type dopant gas before the growth of the n-type layer but after the growth of the buffer layer.

Process for forming a high electron mobility transistor

A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of forming a second layer of InAlGaN on the first layer under a growth temperature higher than that of the first layer, and a step of forming a third layer of GaN, AlGaN or InGaN under a growth temperature higher than that of the first layer.

Semiconductor device and method of manufacturing the same

The semiconductor device includes a SiC substrate; an aluminum nitride layer provided on the substrate and having an island-shaped pattern consisting of plural islands: a channel layer provided on the AlN layer and comprising a nitride semiconductor; an electron supplying layer provided on the channel layer and having a band gap larger than that of the channel layer; and a gate, source and drain electrodes on the electron supply layer. The AlN layer has an area-averaged circularity Y/X of greater than 0.2. Y is a sum of values obtained by multiplying circularities of the plural islands by areas of the plural islands respectively, X is a sum of the areas of the plural islands. The circularity are calculated by a formula of (4&#x3c0;&#xd7;area)/(length of periphery)where the area and the length of periphery are an area and a length of periphery of each island.

Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device

A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer.

Method of manufacturing semiconductor device

A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700&#xb0; C. and is lower than or equal to 1060&#xb0; C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

Method for fabricating semiconductor device

A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer.

Semiconductor device

A semiconductor device includes an AlGaN layer that is provided on a SiC substrate and has an acceptor concentration equal to or higher than a donor concentration, a GaN layer provided on the AlGaN layer, and an electron supply layer that is provided on the GaN layer and has a band gap greater than that of GaN.

A nitride semiconductor device is disclosed. The device includes a stack of semiconductor layers including the channel layer, the spacer layer, and the doped layer. The spacer layer is made of AlN while the doped layer is InAlN. A feature of the embodiment is that the spacer layer has a thickness of 0.5 to 1.25 nm.

Semiconductor device with spacer layer between carrier traveling layer and carrier supplying layer

A semiconductor device includes a first GaN layer provided on a SiC substrate, a second GaN layer provided on the first GaN layer, and an electron supply layer that is provided on the second GaN layer and has a band gap greater than that of GaN, the first GaN layer having an acceptor concentration higher than that of the second GaN layer.

A semiconductor substrate includes an AlN layer that is formed so as to contact a Si substrate and has an FWMH of a rocking curve of a (002) plane by x-ray diffraction, the FWMH being less than or equal to 1500 seconds, and a GaN-based semiconductor layer formed on the AlN layer.

Semiconductor substrate and semiconductor device

A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following:76500/53800/where x is a thickness of the AlN layer and y is an FWHM of a rocking curve of a (002) plane of the AlN layer.

Growing community of inventors

Kanagawa, Japan

Isao Makabe