Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Other

Panasonic Intellectual Property Management Co., Ltd.

Nuvoton Technology Corporation Japan

Yusuke Mori

Isao Kidoguchi

Akihiko Ishibashi

Hideto Adachi

Yuzaburo Ban

Yasuo Kitaoka

Toru Takayama

Kiyoshi Ohnaka

Masahiro Kume

Satoshi Kamiyama

Yoshiaki Hasegawa

Hisashi Minemoto

Masakatsu Suzuki

Ayumu Tsujimura

Toshiya Fukuhisa

Masaya Mannoh

Fumio Kawamura

Takatomo Sasaki

Ryoko Miyanaga

Takeshi Uenoyama

Yasuhito Kumabuchi

Akira Takamori

Tomoya Satoh

Gaku Sugahara

Yasuhiro Fujimoto

Tetsuo Ueda

Toshiya Yokogawa

Yasuhito Takahashi

Yasutoshi Kawaguchi

Masaya Mannou

Satoshi Murasawa

Keiji Yamane

Kiminori Mizuuchi

Minoru Kubo

Nobuyuki Uemura

Hisashi Nakayama

Keiji Ito

Koichi Hayakawa

Kenji Harafuji

Toyoji Chino

Hiroyoshi Yajima

Toshitaka Shimamoto

Toshiya Kawata

Hidemi Takeisi

Yuuzaburou Ban

Kazuhisa Yamamoto

Ken'ichi Kasazumi

Kiyoyuki Morita

Shinji Yoshida

Hidekazu Umeda

Masanori Morishita

Shouichi Takasuka

Shoji Fujimori

Yusaburo Ban

Fukukazu Hirayama

Yoshihiro Hara

Hiroki Nagai

Masashi Yoshimura

Hitoshi Sato

Takayuki Negami

Masato Ishino

Osamu Imafuji

Yuichi Inaba

Kiyoshi Fujihara

Mamoru Imade

Takeshi Yokoyama

Tougo Nakatani

Toshimi Nishiyama

Tomoya Sato

Kimihiko Shibuya

Hideo Kitagawa

Masatoshi Sasaki

Takayuki Kashima

Kazuyoshi Tsukamoto

Takeshi Shimazaki

Shuichi Nakazawa

Yasunori Kai

Takashi Miyamoto

A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×10atom/cm; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×10atom/cmand at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×10atom/cm.

Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal

Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Nitride semiconductor laser element and illumination light source module

A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2&#x3e;X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2&#x3c;D3 is satisfied.

Semiconductor light emitting device and method for manufacturing same

A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Nitride semiconductor device and production method thereof

A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

Nitride semiconductor laser and method for fabricating the same

A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

Light source, optical pickup, and electronic apparatus

A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value Wof a width of the first trench in a region adjacent to the front end face, a minimum value Wof a width of the second trench in the region adjacent to the front end face, a width Wof the first trench at the rear end face, and a width Wof the second trench at the rear end face satisfy Rf&#x3c;Rr, W&#x3c;Wand W&#x3c;WA width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf&#x3e;Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

Semiconductor laser device

The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (), a transducer part (), and an acoustooptic medium (). A high-frequency signal input from the high-frequency signal input part () is converted into a mechanical vibration by the transducer part (), and an optical characteristic of the acoustooptic medium () varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.

Acoustooptic device and optical imaging apparatus using the same

A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate; step (B) of forming on the substratea plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate; step (C) of selectively growing AlGaInN crystals (0&#x2266;x, y, z&#x2266;1: x+y+z=1)on the upper faces of the plurality of stripe ridges, the AlGaInN crystals containing an n-type impurity at a first concentration; and step (D) of growing an AlGaInN crystal (0&#x2266;x', y&#x2032;, z&#x2032;&#x2266;1:x&#x2032;+y&#x2032;+z&#x2032;=1)on the AlGaInN crystals, the AlGaInN crystalcontaining an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlGaInN crystalswith the AlGaInN crystalto form one nitride semiconductor layer

Nitride semiconductor device and process for producing the same

A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width Win a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width Win a direction perpendicular to a cavity length direction, the relations of W&#x3e;Wand 80 &#x3bc;m&#x2267;W&#x2267;60 &#x3bc;m are satisfied.

A semiconductor laser devicehaving a ridge stripe structure comprises: an n-type clad layerhaving a protrusion; and an n-type current block layercovering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8&#xd7;(3Wf+Wr)&#x3c;Sc&#x2266;L/2&#xd7;Wf, and W in an arbitrary position in the range is in a range of &#xbd;(Wf+Wr)&#x3c;W&#x2266;Wf.

A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in.

Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby

A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

The semiconductor laser device includes a cavity structure having a first clad layer, an active layer and a second clad layer formed on a substrate. The second clad layer has a stripe portion extending between the front end face from which laser light is extracted and the rear end face opposite to the front end face. The stripe portion has a first region located closer to the front end face, a second region located closer to the rear end face and a change region whose width changes located between the first and second regions. The effective refractive index difference between the inside and outside of the stripe portion in the change region is greater than that in the first region.

Semiconductor laser device and fabrication method for the same

A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.

Semiconductor laser device and fabrication method therefor

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Hyogo, Japan

Isao Kidoguchi