National Institute of Advanced Industrial Science and Technology

Other

Sharp Kabushiki Kaisha Corporation

University of Tsukuba

Konan Gakuen

Isao Inoue

Nobuyoshi Awaya

Yasunari Hosoi

Hiroyuki Akinaga

Hidenori Takagi

Makoto Watanabe

Daisuke Honda

Kunimitsu Kaya

Makato Shiho

Atsushi Nakazawa

Shuichiro Yasuda

Makoto Shiho

Provided is a strain belonging to the genus, the strain being characterized by there being at least 10 mass % of squalene in all the lipids produced by the strain, and by forming colonies exhibiting an orange-to-red color.

Microorganism having high squalene-producing ability, and method for producing squalene by means of same

An objective of the present invention is to provide a switching device that shows two markedly different stable resistance characteristics reversibly and repetitively, and which is applicable to highly integrated nonvolatile memories. The present invention provides a switching device, which comprises a variable resistor element that has, between two electrodes, a metal-oxide thin-film comprising a single central metal element with a compositional variation; which is connected to a control circuit which can apply, between said two electrodes, a voltage or a current selected from among a voltage or a current of the first threshold or higher, a voltage or a current of the second threshold or lower whose absolute value is smaller than the absolute value of said first threshold, and a voltage or a current of the third threshold or lower whose absolute value is smaller than the absolute value of said second threshold; and in which the interelectrode resistance characteristic reversibly changes by a factor of 1,000 to 10,000 in the voltage or current region whose absolute value is equal to or below the third threshold.

Switching device

A nonvolatile semiconductor device is configured so that a load circuit applying voltage to a variable resistive element is provided electrically connecting in series to the variable resistive element, a load resistive characteristic of the load circuit can be switched between two different characteristics. The two load resistive characteristics are selectively switched depending on whether a resistive characteristic of the variable resistive element transits from low resistance state to high resistance state, or vice versa, voltage necessary for transition from one of the two resistive characteristics to the other is applied by applying writing voltage to a serial circuit of the variable resistive element and load circuit. After the resistive characteristic of the variable resistive element transits from one to the other, voltage applied to the variable resistive element does not allow a resistive characteristic to return from the other to one depending on the selected load resistive characteristic.

Nonvolatile semiconductor memory device

Growing community of inventors

Ibaraki, Japan

Isao Inoue