Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Sony Corportion

Isao Hirota

Masahiro Segami

Sozo Yokogawa

Kenji Nakayama

Hiroaki Tanaka

Kouichi Harada

Yasushi Saito

Norihiko Yoshimura

Atsushi Suzuki

Yoshikazu Nitta

Yasushi Maruyama

Yorito Sakano

Nobuhiro Karasawa

Junichiro Azami

Motohashi Yuichi

Hajime Takashima

Yukihisa Kinugasa

Hiroyuki Terakago

Shogo Numaguchi

Yuichiro Shiraishi

Keiji Mabuchi

Tetsuji Yamaguchi

Kenji Yamamoto

Masaaki Takizawa

Hideo Nomura

Motonobu Torii

Masahiro Inoue

Isao Ichimura

Kengo Hayasaka

Taiichiro Watanabe

Masaharu Hamasaki

Taro Sugizaki

Masao Matsumura

Takashi Fukusho

Hideki Shoyama

Hiroshi Hibi

Motoyuki Koike

Hideto Isono

Shunji Kawaguchi

Hidenobu Kakioka

Azuma Kawabe

Ryo Takiguchi

Hiromichi Matsui

Fumiaki Fukuoka

The present disclosure relates to a solid-state imaging device and electronic equipment that enable improvement of image quality of a captured image. In the solid-state imaging device, two or more photoelectric conversion layers including a photoelectric converter and a charge detector are laminated. The solid-state imaging device is configured to include a state in which light having entered one pixel of a first photoelectric conversion layer closer to an optical lens is received by the photoelectric converter of a plurality of pixels of the second photoelectric conversion layer farther from the optical lens. The technology of the present disclosure can be applied to, for example, a solid-state imaging device that performs imaging.

Solid-state imaging device and electronic equipment

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

Solid-state image pickup device and electronic apparatus

The present technology relates to a solid-state image capturing apparatus and an electronic device that can acquire a normal image and a narrow band image at the same time. The solid-state image capturing apparatus includes a plurality of substrates laminated in two or more layers, and two or more substrates of the plurality of substrates have pixels that perform photoelectric conversion. At least one substrate of the substrates having the pixels is a visible light sensor that receives visible light, and at least another substrate of the substrates having the pixels is a narrow band light sensor that includes narrow band filters being optical filters permeating light in a narrow wavelength band, and receives narrow band light in the narrow band.

Solid-state image capturing apparatus and electronic device for acquiring a normal image and a narrow band image

The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section. The present technology is applicable to solid-state imaging devices, for example.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

The present disclosure relates to an imaging device, a driving method, and an electronic apparatus that can capture an image with a higher dynamic range. The imaging device includes a pixel region in which pixels are arranged, the pixels each including a photoelectric conversion unit that converts incident light into electric charges through electric conversion and stores the electric charges, and two or more charge storage units that store the electric charges transferred from the photoelectric conversion unit; and a drive unit that drives the pixels. The drive unit drives each pixel to cause the photoelectric conversion unit to repeatedly transfer electric charges with different exposure times to the two or more charge storage units during the light reception period of one frame. The present technology can be applied to an imaging device capable of capturing an HDR image, for example.

Imaging device, driving method, and electronic apparatus

There are provided a solid-state image pickup device and a camera system that include no useless pixel arrangement and are capable of suppressing decrease in resolution caused by adopting stereo function. A pixel array section including a plurality of pixels arranged in an array is included. Each of the plurality of pixels has a photoelectric conversion function. Each of the plurality of pixels in the pixel array section includes a first pixel section and a second pixel section. The first pixel section includes at least a light receiving function. The second pixel section includes at least a function to detect electric charge that has been subjected to photoelectric conversion. The first and second pixel sections are formed in a laminated state. Further, the first pixel section is formed to have an arrangement in a state shifted in a direction different from first and second directions that are used as references. The second direction is orthogonal to the first direction. The second pixel section is formed in a square arrangement along the first direction and the second direction orthogonal to the first direction.

Solid-state image pickup device and camera system

The present disclosure relates to an imaging device, a driving method, and an electronic apparatus that can capture an image with a higher dynamic range. The imaging device includes a pixel region in which pixels are arranged, the pixels each including a photoelectric conversion unit that converts incident light into electric charges through electric conversion and stores the electric charges, and two or more charge storage units that store the electric charges transferred from the photoelectric conversion unit, and a drive unit that drives the pixels. The drive unit drives each pixel to cause the photoelectric conversion unit to repeatedly transfer electric charges with different exposure times to the two or more charge storage units during the light reception period of one frame. The present technology can be applied to an imaging device capable of capturing an HDR image, for example.

The present disclosure relates to a solid state imaging device, a drive control method therefor, an image processing method, and an electronic apparatus capable of achieving both generation of a pixel signal with a high dynamic range and generation of phase difference information. A pixel array unit of the solid state imaging device is configured such that a plurality of pixels each having the same light receiving region is arranged in a matrix, and light that has entered a single microlens enters the plurality of pixels adjacent to each other. In addition, a first pixel and a second pixel included in the plurality of pixels below the microlens of the pixel array unit are set to have a sensitivity difference. The technique of the present disclosure can be applied to, for example, a solid state imaging device or the like.

Generation of pixel signal with a high dynamic range and generation of phase difference information

The present technique relates to a solid-state imaging element and a driving method and electronic equipment that enable sufficient extension of the dynamic range and obtention of an image with higher quality. In a unit pixel, a first photoelectric converter and a second photoelectric converter are provided. Furthermore, a charge accumulating part is connected to the second photoelectric converter with the intermediary of a second transfer gate part and a charge obtained by photoelectric conversion in the second photoelectric converter is transferred to the charge accumulating part via the second transfer gate part. Moreover, an anti-blooming gate part is connected to the second photoelectric converter and the second photoelectric converter can be reset.

Solid-state imaging element and driving method and electronic equipment

Growing community of inventors

Kanagawa, Japan

Isao Hirota