Tokyo Ohka Kogyo Co., Ltd.

Tokyo Institute of Technology

Tokyo Electron Limited

Yokohama National University

Isao Hirano

Kimihisa Yamamoto

Takane Imaoka

Takayuki Toshima

Junji Nakamura

Shoichi Terada

Takeshi Iwai

Kazumasa Wakiya

Takehiro Seshimo

Satoshi Fujimura

Masahiro Suzuki

Junichi Tsuchiya

Yasuo Suzuki

Yohei Kinoshita

Toshiaki Hato

Yoshiaki Nishijima

TseWei Yu

YaChien Chuang

A film cleaning solution that contains a solvent and a metal removing agent, in which two or more kinds of the solvents are contained, and a distance between a Hansen solubility parameter of the film cleaning solution and a Hansen solubility parameter of dimethylacetamide is 1.0 or less.

Film cleaning solution and method for cleaning film

Provided is a cleaning composition for a component of a semiconductor manufacturing process chamber including: a foaming agent; an oxidizing agent; and an acidic compound, in which a value of (Number of moles of the acidic compound contained in the cleaning composition×acid valence of the acidic compound)/(Number of moles of the foaming agent contained in the cleaning composition×Base valence of the foaming agent) is more than 0.1 and less than 1.5.

Cleaning composition and cleaning method for component of semiconductor manufacturing process chamber

A cleaning composition which can remove a layer of interest using a conventional apparatus, such as a coater, a baking furnace and a cleaning chamber, installed in semiconductor manufacturing equipment while preventing the damage or deformation of layers other than the layer of interest, such as a substrate and an interlayer insulation film; a cleaning method using the cleaning composition; and a method for producing a semiconductor employing the cleaning method. A layer of interest formed on a substrate is cleaned with a cleaning composition containing a component capable of decomposing the layer of interest and a film-forming polymer. An example of the layer of interest is a hard mask film. An example of the component is at least one of a basic compound and an acidic compound.

Cleaning composition, cleaning method, and method for manufacturing semiconductor

A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

Washing method, washing device, storage medium, and washing composition

A method includes contacting an organic cured film with an acidic cleaning liquid including sulfuric acid and a water-soluble organic solvent and does not include a compound capable of generating nitronium ions. An amount of the sulfuric acid in the acidic cleaning liquid is 40% by mass or more, and an amount of water in the acidic cleaning liquid is 5% by mass or less.

Method for removing organic cured film on substrate, and acidic cleaning liquid

A hydrogen storage metal is disposed on a base material in a predetermined shape and a predetermined size such that hydrogen is detected based on surface plasmon resonance induced by incident light. The hydrogen storage metal is formed of a film body containing palladium and a noble metal. A spectrum of the light having passed through the hydrogen storage metal in which hydrogen is stored has a peak in a wavelength band separated from an absorption spectrum Cof carbon dioxide with respect to the light and an absorption spectra Hto Hof water with respect to the light.

Hydrogen detection element, method for manufacturing hydrogen detection element, and hydrogen detection device

A polyimide-based resin film cleaning liquid includes at least one solvent selected from the group consisting of a hydroxy aliphatic carboxylic acid ester, an aliphatic carboxylic acid ester, a chain or cyclic ketone, an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, and an aprotic polar solvent other than these solvents.

Polyimide-based resin film cleaning liquid, method for cleaning polyimide-based resin film, method for producing polyimide coating, method for producing filter, filter medium, or filter device, and method for producing chemical solution for lithography

A method of producing a metal complex-supporting mesoporous material that can support a metal complex in the pores thereof without causing aggregation of the metal complex. A metal complex-supporting mesoporous material supporting a metal complex in the pores thereof without causing aggregation of the metal complex. A method of producing a mesoporous material supporting metal-containing nanoparticles using the metal complex supported in the pores of the mesoporous material as a template. A solution of a metal complex prepared by a phenyl azomethine dendrimer compound having a specific structure is brought into contact with a mesoporous material so that the metal complex of the phenyl azomethine dendrimer compound is supported by the mesoporous material.

Method of producing metal complex-supporting mesoporous material

A method for producing a substrate having dispersed particles of a dendrimer compound on the surface thereof, the method including: an application step including dissolving a phenyl azomethine dendrimer compound in a solvent to prepare a solution, and applying the solution on the surface of a substrate; and a volatilization step including volatilizing the solvent from the solution applied on the surface of the substrate, the phenyl azomethine dendrimer compound included in the solution having a concentration of no greater than 5 &#x3bc;mol/L is employed.

Method for producing substrate having dispersed particles of dendrimer compound on the surface thereof, and substrate having dispersed particles of dendrimer compound on the surface thereof

A surface modifying material for forming a surface modifying layer provided between a substrate and a resist film, the surface modifying material including an epoxy resin having a weight average molecular weight of 1,000 to 50,000;

Surface modifying material, method of forming resist pattern, and method of forming pattern

A method for preparing carbon nanotubes including attaching a catalyst consisting of a compound in which a transition metal element of Group 8, 9 or 10 is coordinated to a nitrogen-containing dendrimer compound having at least one nitrogen atom, to which a metal element may be coordinated, on a surface of a substrate, and thermally decomposing a carbon compound in the vicinity of the substrate while supplying the carbon compound on the surface of the substrate to which the catalyst is attached. The catalyst for producing the carbon nanotubes is a compound in which a transition metal element of Group 8, 9 or 10 is coordinated to a nitrogen-containing dendrimer compound having at least one nitrogen atom to which a metal element may be coordinated.

Method of preparing carbon nanotubes and catalyst for producing carbon nanotubes

A resist composition that includes a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid generator component (B) that generates acid upon exposure, and an epoxy resin (G). Also, a method of forming a resist pattern that includes using the above resist composition to form a resist film on the substrate, conducting exposure of the resist film, and alkali-developing the resist film to form a resist pattern.

Resist composition and method of forming resist pattern

A positive resist composition that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure to radiation, wherein the component (A) includes a structural unit (a1) represented by a general formula (a1-2) or (a1-4), a structural unit (a2) derived from an acrylate ester that contains a lactone-containing monocyclic or polycyclic group, and a structural unit (a3), which is different from the structural unit (a1) and the structural unit (a2), and is derived from an acrylate ester that contains an aliphatic cyclic group-containing non-acid-dissociable, dissolution-inhibiting group and contains no polar groups, and the component (B) includes an onium salt (B1) having an anion portion represented by a formula: R&#x2014;SO. 

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Kawasaki, Japan

Isao Hirano