Hitachi, Ltd.

Japan Ae Power Systems Corporation

Japan Ae Power System Corporation

Fuji Electric Co., Ltd.

Isao Hashimoto

Takayuki Suzuki

Hiroyuki Fujita

Kazuo Mera

Satoshi Ichimura

Shigekatsu Sato

Takayoshi Seki

Yasuo Yamashita

Kensuke Amemiya

Katsumi Tokiguchi

Hiroyuki Tomita

Yukio Okamoto

Shiro Eguchi

Shotaro Ooishi

Tomoyuki Hikosaka

Satoru Gohzaki

Tadashi Sato

Shigeru Tanaka

Keiji Arimatsu

Satoshi Ogura

Hisao Oonuki

Yasuo Hira

Takashi Iga

Noriyuki Sakudo

Masayasu Fujisawa

Yasunori Ohno

Yasunori Nakano

Kenichi Natsui

Minoru Fujimoto

Kouji Ishiguro

Atsuko Ohkawa

Tamaki Toba

Hidenobu Koide

Tatsuya Fujisawa

Nobuyasu Harada

Nobuyuki Hashimoto

Satoru Gozaki

Yuzo Oka

Hideshi Kadooka

At a conveying pathfor continuously carrying a sheet material, an electron beam irradiation meansis arranged in opposition to at least one surface of the sheet material, and at least one surface of the sheet materialis sterilized using such an electron beam. The conveying pathtakes shape of a hollow box surrounding the sheet material, and has an electron beam irradiation areaat a part of this area, while keeping a reduced-pressure state ranging from 10 to 80,000 Pa using a pressure reduction means. Further, the electron beam irradiation areawhere the electron beam irradiation meansis arranged at least one sub areaat each of adjacent hollow box-shaped conveying pathat carry-in side and carry-out side of the sheet material, providing the pressure reduction meansfor depressurizing the sub area

Electron beam irradiation apparatus for sterilizing sheet material

The electron beam irradiating apparatus with the monitoring device has an electron beam irradiating means for irradiating materials in an irradiation chamber. The monitoring device has a photographing means for imaging a lights emitted by irradiating an electron beam to the materials; a storage means that stores state of electron beam irradiation in advance; and a calculating means that processes an image, which is captured by the photographing means, to decide a state of electron beam irradiation. The storage means has stored at least three state of electron beam irradiation and also has stored image luminance associated with those states of electron beam irradiation. The calculating means loads the image, which is captured by the photographing means, to compare the loaded image with the image luminance stored in the storage means, thereby deciding a state of electron beam irradiation.

Electron beam irradiating apparatus with monitoring device

The apparatus has a rotating bodyin an irradiation processing chamber. Outside the rotating body, plural retaining mechanismsare installed at regular interval to retain open-mouthed containers. Above the conveying path, an electron beam generating meansis arranged. The rotating bodyhas a rotary shaftthat penetrates into the electron beam generating means. On the rotary shaft, a grid plateof an electron beam sourceof the electron beam generating meansis rotatively installed. On the grid plate, plural emission holesare provided at the same interval as that of the retaining mechanismson the rotating body. In an predetermined irradiation area, the emission holesand a irradiation windowson the irradiation processing chamberand the retaining mechanismfor holding the container are aligned approximately on the same axes.

Electron beam irradiation apparatus for open-mouthed containers

There are provided an electron beam application method and an electron beam application device capable of uniformly applying electron beams to an object even if the electron beams have a low energy. For this, electron beams (EB) are applied to a beverage container () (object) within a magnetic barrier (MF) formed by combining a plurality of magnetic fields generated in an electron beam application region.

Electron beam irradiation method, electron beam irradiation apparatus, and electron beam irradiation apparatus for open-mouthed container

An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.

Ion beam processing apparatus and method of operating ion source therefor

A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

Ion implanter

An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.

A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field. This cusped magnetic field falls steeply from a position of electron cyclotron resonance magnetic field strength to a boundary portion between the electron heating space chamber and the plasma generating space chamber and its direction is reversed to that of the strong magnetic field with decreasing distance from the boundary portion between the electron heating space chamber and the plasma generating space chamber to the plasma generating space chamber. A second static magnetic field generating device is provided with permanent magnets arranged around the plasma generating space chamber. Adjacent ones of the permanent magnets have polarities opposite to each other.

Plasma processing apparatus and plasma processing method using the same

In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly

The invention aims at reducing the movement of an operator to improve the operability. A vacuum chamber door is provided on the front side of a vacuum chamber, and sample holders are connected to the vacuum chamber door through a rotation shaft and a disk. An ion source is detachably mounted on the right side of the vacuum chamber, and a control panel is provided on the left side of the vacuum chamber. The vacuum chamber door is supported by a linearly reciprocally-moving mechanism so as to be drawn away from the vacuum chamber. An operation surface of the vacuum chamber door and an operation surface of the control panel are disposed substantially in a common plane.

Ion beam processing apparatus

An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Ion implanting apparatus capable of preventing discharge flaw production

In order to implant an ion beam on wafers with low contamination, especially in a large capacity ion implanter for implanting for a long time, a rotating holder 1 shaped like a cylinder or a circular cone is provided, and the wafers 2 are arranged inside of the rotating holder 1 so as to be fixed firmly by a centrifugal force acting on the wafers. Thereby, the wafers are implanted with low contamination, because the periphery of the wafer is not supported by any stopper which may otherwise be sputtered and cause contamination.

Ion implanter for implanting ion on wafer with low contamination

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Hitachi, Japan

Isao Hashimoto