Hitachi, Ltd.

Isao Hara

Ryo Kuwana

Masahiro Masunaga

Atsushi Fushimi

Daisuke Shinma

Hideki Hanami

Takashi Ito

Mutsumi Suzuki

Akio Shima

Atsushi Baba

Shintaroh Sato

Shinji Nomoto

Provided is a SiC semiconductor element equipped with a SiC integrated circuit having a stable characteristic, which operates normally even in a radiation environment. A radiation resistant circuit device includes: a SiC semiconductor element equipped with a SiC integrated circuit, a printed board on which the SiC semiconductor element is provided, a conductive wiring that is arranged inside the printed board and has a predetermined surface facing a bottom surface of a substrate electrode of the SiC integrated circuit, and an insulating material arranged between the bottom surface of the substrate electrode of the SiC integrated circuit and the predetermined surface of the conductive wiring.

Radiation resistant circuit device, pressure transmission device, and nuclear power plant measurement system

A semiconductor device includes an electrostatic protection circuitand a MOSFETincluding a gate terminal. The electrostatic protection circuitincludes a positive-side power supply terminal, a negative-side power supply terminal, a first protection diode, a second protection diode, a resistance element, and a bipolar transistor. The second protection diodeincludes an anode terminal electrically connected to the negative-side power supply terminalvia the resistance element, and a cathode terminal electrically connected to the gate terminal. The bipolar transistorincludes a base terminal, an emitter terminal, and a collector terminal. The bipolar transistoris electrically connected to the anode terminal of the second protection diode, the gate terminal, and the positive-side power supply terminal. The electrostatic protection circuitis formed on a semiconductor substrate made of silicon carbide.

Semiconductor device

An n type semiconductor layer is formed over an n type semiconductor substrate made of silicon carbide, a p type impurity region is formed in the semiconductor layer, and an n type drain region and an n type source region are formed in the impurity region. A field insulating film having an opening that selectively opens a part of the impurity region located between the drain and source regions is formed over the impurity region and the drain and source regions. A gate insulating film is formed over the impurity region in the opening, and a gate electrode is formed on the gate insulating film. Here, a field relaxation layer having an impurity concentration higher than that of the impurity region is formed in at least a part of the impurity region located between the drain and source regions in plan view and located below the field insulating film.

Semiconductor device, manufacturing method thereof, and pressure transmitter using semiconductor device

Provided is a pressure transmitter device including: a pressure receiving diaphragm in contact with a measuring fluid; a fill fluid, in contact with an opposite side of the pressure receiving diaphragm to the other side in contact with the measuring fluid, for transferring a pressure received by the pressure receiving diaphragm from the measuring fluid to a sensor disposed at a position apart from the pressure receiving diaphragm; a hydraulic path filled with the fill fluid and connecting the pressure receiving diaphragm and the sensor; and an output circuit for measuring and outputting an absolute pressure of the measuring fluid or a differential pressure between measuring fluids based on the pressure received by the sensor, where a hydrocarbon absorbing material for absorbing hydrocarbon and a hydrogen occlusion material for occluding hydrogen are provided inside the hydraulic path.

Pressure transmitter device

In a pressure and pressure difference transmitter that seals a sealing liquid for transmitting the pressure inside a pressure leading passage, the pressure and pressure difference transmitter forming a space between a diaphragm and a main body side wall surface, including the pressure leading passage connected to the main body side wall surface, and transmitting the pressure received by the diaphragm to a sensor through the sealing liquid sealed in the space and the pressure leading passage, a hydrogen occluding material for occluding hydrogen atoms of the sealing liquid is disposed at least in the sealing liquid, the main body side wall surface, or a part of a portion from the main body side wall surface to the sensor, with the hydrogen occluding material being formed with an uneven shape on the surface or being attached with a granular hydrogen occluding material.

Transmission device

Hydrogen which has entered into a pressure/differential pressure transmitter from external or internally generated hydrogen and hydrocarbons are converted to air bubbles within pressure guide paths. As a result, the indicated value drifts and an accurate numerical value is not output. A pressure/differential pressure transmitter includes a space formed between a diaphragm and a main body side wall face, pressure guide paths connected to the main body side wall face, a sealed liquid sealed in the space and the pressure guide paths to transmit a pressure received by the diaphragm to a sensor, and a hydrogen absorption material provided at least in the sealed liquid, on the main body side wall face, or in a part of a path between the main body side wall face and the sensor to absorb hydrogen atoms in the sealed liquid.

Growing community of inventors

Tokyo, Japan

Isao Hara