Canon Kabushiki Kaisha

Isao Hakamada

Hidetoshi Nojiri

Seiichi Miyazawa

Akira Shimizu

Toshitami Hara

Yoshinobu Sekiguchi

Naoto Kawamura

Koichi Masegi

Masanori Takenouchi

Kenji Nakamura

Takashi Kitamura

Kazuhiko Matsuoka

Fumitaka Kan

Naoji Hayakawa

Yoshioki Hajimoto

Masaaki Ishii

Haruo Uchiyama

Yasuo Kozato

In a multibeam emitting device provided with a plurality of semiconductive light-emitting elements monolithically formed on a semiconductor substrate, the semiconductor light-emitting elements are formed so that the directions of emission of the lights emitted from the elements differ from one another.

Multibeam emitting device

A charging device for forming a latent image of high precision includes plural electron beams generated by plural solid state beam sources, which are independently controlled by plural accelerating electrodes by independently variable voltages.

Charging device

A semiconductor laser device wherein a depletion layer is formed in a laser activation layer by biasing the laser device and a third terminal controls an injection current flowing between first and second terminals of the device.

Semiconductor laser device having a semiconductor region for creating a

A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice layer is lower than the potential of the semiconductor layer in which the superlattice layer is formed. The potential of the barrier of the superlattice layer is higher than the potential of the semiconductor layer in which said superlattice layer is formed.

Semiconductor device having a superlattice structure

There is disclosed a semiconductor laser having a super lattice structure near an active layer, in which the super lattice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a ratio of the thicknesses changes within the super lattice structure toward an active layer.

Semiconductor laser having superlattice structure

A semiconductor laser comprises a plurality of lasers provided in the form of an array, the lasers being monolithically formed, a plurality of photodetector elements being monolithically formed, a plurality of first separating portions for separating the lasers and the photodetector elements from each other, and at least one second separating portion for separating the plurality of lasers from one another and the plurality of photodetector elements from one another.

Semiconductor laser provided with a plurality of lasers in the form of

A semiconductor device is constructed with a monocrystalline semiconductor layer laminated in a strip-pattern on a substrate, and amorphous or polycrystalline semiconductor layer formed on the substrate in a manner to encompass the monocrystalline semiconductor layers. The monocrystalline semiconductor layer comprises a plurality of layers including a laser active layer.

Semiconductor device and its fabrication

In an image recording apparatus for recording images by modulating a light beam by information signals and applying the light beam to a recording medium, the longitudinal mode of the light beam is multiple, that is, comprises a plurality of oscillation wavelengths.

Image recording apparatus

The present invention extends the service life of a semi-conductor laser element by bonding a light transmitting member for transmitting the output light from said laser element to a support member for said transmitting member with soft metal solder to improve hermetic sealing therebetween. The beam diameter of the output light generated by said semi-conductor laser element is not substantially changed when passing through the transmitting member since said bonding is conducted at a temperature not causing deformation by softening of said light transmitting member that could cause formation of a distortion therein. The surfacial precision of said light transmitting member also is improved by selecting the thermal expansion coefficient of the material constituting said light transmitting member to be approximately equal to that of said support member. Therefore, the invention provides a semi-conductor laser apparatus applicable in equipment requiring a high resolution.

Semi-conductor laser apparatus with support and soldering means for

In a semiconductor laser optical system which uses a light source a semiconductor laser having different diverging points and divergence angles in orthogonal directions and in which the light beam from the light source is imaged on a scanned surface, only a spherical surface optical system is provided between the semiconductor laser and the scanned surface. The spherical surface optical system includes two partial optical systems, i.e. a first image forming optical system and a second image forming optical system as viewed from the light source side. By selecting the optical constant of one of the two image forming optical systems to a predetermined value, the peak power of the image forming spot on the scanned surface is maximized.

Image forming optical system using a semiconductor laser

An image forming optical system for a semiconductor laser which forms an image of a semiconductor laser as a light source through an image forming lens, wherein the image forming lens is so disposed that it maintains the original divergent point of the semiconductor laser in the vertical direction and the image forming plane in a conjugative relationship, and that the image forming magnification .beta. in the vertical direction satisfies the following relationship of .beta.=.gamma..multidot.sin .theta..sub.O .multidot.Feff (1.2.ltoreq..gamma..ltoreq.3.0) based on an angle .theta..sub.O, at which the intensity of orientation characteristic in the vertical direction assumes 1/e.sup.2 at the center and an effective F-number Feff at the image side.

Growing community of inventors

Yokohama, Japan

Isao Hakamada