Mitsubishi Materials Corporation

Isao Arai

Kazunari Maki

Kiyotaka Nakaya

Kenji Kubota

Hiroyuki Mori

Yoshie Tarutani

Yoshiyuki Nagatomo

Nobuyuki Terasaki

Yoshirou Kuromitsu

Satoru Mori

Toshio Sakamoto

Norihisa Iida

U Tani

Yuuji Sato

Fumitake Kikuchi

Shigeru Shimoizumi

Shin Oikawa

Takahiro Takeda

In a method for producing high-purity electrolytic copper, a first additive (A) containing an aromatic ring of a hydrophobic group and a polyoxyalkylene group of a hydrophilic group, a second additive (B) formed of polyvinyl alcohols, and a third additive (C) formed of tetrazoles are added to a copper electrolyte, copper electrolysis is performed by controlling each concentration of the first additive (A), the second additive (B), and the third additive (C), a current density and a bath temperature, and accordingly, electrolytic copper in which a concentration of Ag is less than 0.2 mass ppm, a concentration of S is less than 0.07 mass ppm, a concentration of all impurities is less than 0.2 mass ppm, and an area ratio of crystal grains having an average crystal grain misorientation (referred to as a GOS value) exceeding 2.5&#xb0; is 10% or less is obtained.

Method for producing high-purity electrolytic copper

The present invention provides a high-purity electrolytic copperhaving a Cu purity excluding gas components (O, F, S, C, and Cl) is 99.9999 mass % or more, a content of S is 0.1 mass ppm or less, and an area ratio of crystals having a (101)&#xb1;10&#xb0; orientation is less than 40%, when crystal orientation is measured by electron backscatter diffraction in a cross section along a thickness direction.

High-purity electrolytic copper

A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

High purity copper sputtering target material

A hot-rolled copper plate consists of pure copper having a purity of 99.99 mass % or greater, the hot-rolled copper plate having an average crystal grain diameter of 40 &#x3bc;m or less, and a (&#x3a3;3+&#x3a3;9) grain boundary length ratio (L (&#x3c3;3+&#x3c3;9)/L), which is a ratio between a total crystal grain boundary length L measured by an EBSD method and a sum L (&#x3c3;3+&#x3c3;9) of a &#x3a3;3 grain boundary length L&#x3c3;3 and a &#x3a3;9 grain boundary length L&#x3c3;9, being 28% or greater.

Hot-rolled copper plate

A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Power module substrate, power module substrate with heat sink, power module, and method of manufacturing power module substrate

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Naka, Japan

Isao Arai