Hitachi, Ltd.

Hitachi Microcomputer Engineering, Ltd.

Hitachi Vsli Engineering Corp.

Isao Akima

Kunihiko Nishi

Michio Tanimoto

Nobuyoshi Tanimura

Kazuo Yoshizaki

Hideaki Nakamura

Sho Yamamoto

Toshihiro Yasuhara

Katsuhiro Tabata

Toshio Nosaka

Souichi Kunito

Yasuhiro Yoshikawa

A package is provided for achieving higher packing density and higher circuit integration of memories, in particular, a structure is provided having a plurality of thin, surface mount packages which are stacked up. Each of the laminated packages includes a semiconductor pellet, leads fixed to the front surface of the pellet, a radiating plate fixed to the rear surface of the same, and a resin mold member. To achieve a stabilized laminated structure, the mold member is shaped into a convex form on the front side of the pellet and into a concave form on the rear side of the same, so that the concave portion of one package can engage with the convex portion of another package.

Semiconductor device and an electronic device with the semiconductor

In a static type RAM, a sense amplifier includes first and second dissymmetric type differential amplifier circuits each of which has a pair of differential transistors and an active load circuit such as a current mirror circuit connected to the drains of the differential transistors. One of balanced signals delivered from a memory cell is supplied to the non-inverting input terminal of the first dissymmetric type differential amplifier circuit and the inverting input terminal of the second dissymmetric type differential amplifier circuit. The other of said balanced signals is applied to the remaining input terminals of the first and second dissymmetric type differential amplifier circuits. As a result, notwithstanding that balanced signals cannot be delivered from each dissymmetric type differential amplifier circuit, amplified balanced signals can be obtained. The operating speed of the RAM can be raised owing to the fact that the dissymmetric type differential amplifier circuit having an active load circuit exhibits a comparatively high gain and the fact that the signal amplification by the balanced circuit is permitted.

High speed semiconductor memory device having a high gain sense amplifier

Growing community of inventors

Fussa, Japan

Isao Akima