Hitachi, Ltd.

Hitachi Global Storage Technologies Japan, Ltd.

Hitachi Global Storage Technologies

Isamu Yuito

Kazuo Shiiki

Hideo Tanabe

Naoki Koyama

Hisashi Takano

Eijin Moriwaki

Toshio Kobayashi

Masahiro Kitada

Noboru Shimizu

Masaaki Futamoto

Ryoichi Nakatani

Yoshibumi Matsuda

Mikio Suzuki

Kyo Akagi

Takeshi Nakao

Yoshinori Miyamura

Fumio Kugiya

Hirotsugu Fukuoka

Takayuki Munemoto

Tokuho Takagaki

Hideo Todokoro

Tohru Ishitani

Tsuyoshi Ohnishi

Chiaki Ishikawa

Makoto Morijiri

Yoshihiro Shiroishi

Ushio Kawabe

Yoshihiro Hamakawa

Hitoshi Nakamura

Hideo Fujiwara

Yukio Honda

Tetsuo Kobayashi

Toshiyuki Aida

Hiroaki Koyanagi

Shigehiko Yamamoto

Tooru Takeura

Eiji Ashida

Sadanori Taguchi

Kiminari Shinagawa

Haruko Tanaka

Akira Taniyama

Noriyuki Kumasaka

Hiroshi Okano

Yoshio Homma

Akira Misumi

Takao Kawamura

Mitsuhiro Kudo

Mikio Hirano

Atsushi Saiki

Harunobu Saito

Saburo Suzuki

Kiyoshi Akamatsu

Kikuji Sato

Hiroshi Fukushima

Shinobu Sasaki

Katsunori Ohwada

Yoshio Degawa

Norio Shibata

Akemi Iijima

Kasuo Shiiki

Keiko Shiokawa

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Method for manufacturing magnetic head device

Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect

An area in which an insulating film is formed over a substrate of a recording/reproducing separated type head is limited to the vicinity of a GMR film. This enables heat of Joule heating by a coil to be guided to the substrate without being obstructed by the insulating film. Electrodes, an upper shield film, a lower shield and a lower pole that are formed in-between are metallic thin films of high thermal conductivity, and accordingly have little influence. Similarly, gap films and a separation film that are positioned in-between, though they are electrically insulating films made of A1O, have no great influence because of their thinness. According to the invention, a rise of the head's own temperature is restrained by efficiently radiating heat generated by the head itself to the substrate. As a result, it is thereby made possible to provide a highly reliable recording/reproducing separated type head whose deformation quantity is smaller and which can avoid coming into contact with a recording medium.

Recording/reproducing separated type head with heat radiating structure

In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.

Combination perpendicular magnetic head having shield material formed at both ends of an upper pole of a write element

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference

Magnetic head having track width defined by trench portions filled with magnetic shield material

In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head-including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.

Method of fabricating a magnetic head by focused ion beam etching

Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect

Narrow track thin film head including magnetic poles machined by focused ion beam etching

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect

Narrow track thin film head having a focused ion beam etched air bearing surface

Narrow track thin film magnetic head suitable for high density recording

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetoresistance effect multilayer film with ferromagnetic film

A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by the patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks.

Method of fabricating a magnetoresistive thin-film magnetic head

In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.

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Ome, Japan

Isamu Yuito