Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Other

Isamu Sekihara

Satoshi Tomimatsu

Tohru Ishitani

Aritoshi Sugimoto

Hidemi Koike

Junzo Azuma

Kaoru Umemura

Akira Shimase

Yuichi Hamamura

Muneyuki Fukuda

Hiroyasu Shichi

Takahiro Sato

Yasuhiko Nara

Tsuyoshi Ohnishi

Yuichi Madokoro

Hiroyuki Muto

Tohru Ando

Masahiro Sasajima

Tsutomu Saito

Tsuyoshi Onishi

Akinari Morikawa

Tomoharu Obuki

Terutaka Nanri

Megumi Aizawa

Hirokazu Kaneoya

Kunio Sakamoto

Provided is a charged particle beam device provided with: a charged particle source; an objective lens for focusing a charged particle beam emitted from the charged particle source onto a sample; a detector for detecting a secondary charged particle emitted from the sample; a probe capable of coming into contact with the sample; a gas nozzle for emitting conductive gas to the sample; and a control unit for controlling the drive of the probe and gas emission from the gas nozzle, wherein before bringing the probe into contact with the sample after applying the charged particle beam to the sample to machine the sample, the control unit emits gas toward a machining position from the gas nozzle and applies the charged particle beam to form a conductive film on a machining portion of the sample, and the charged particle beam device is provided with a contact detection unit for determining that the conductive film formed on the machining portion and the probe have come into contact with each other.

Charged particle beam device and sample preparation method

Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle &#x3b8; formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

Charged particle beam device

Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

Charged particle beam device, position specification method used for charged particle beam device, and program

Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.

Focused ion beam device and focused ion beam processing method

An object of the present invention relates to realizing the processing of a sample by charged particle beams and the monitoring of the processed cross-section with a high throughput. It is possible to process an accurate sample without an intended region lost even when the location and the size of the intended region are unknown by: observing a cross-sectional structure being processed by FIBs by using a secondary particle image generated from a sample by the ion beams shaving a cross section; forming at least two cross sections; and processing the sample while the processing and the monitoring of a processed cross section are carried out.

Charged particle beam apparatus, and sample processing and observation method

A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

Sample inspection apparatus

A hole in a sample from which a sample piece has been extracted with a focused ion beam is filled at high speed using ion beam gas assisted deposition. A method of filling the hole by using the ion beam includes a step of irradiating the hole formed in a face of the sample with the ion beam to thereby form an ion beam gas-assisted deposition layer in the hole. The ion beam gas-assisted deposition layer is formed in the hole while controlling the area to which the ion beam is irradiated so as to cause the ion beam to fall on a part of a side wall of the hole and to not fall on another part of the side wall in an area scanned with the ion beam. The filled hole may then be covered with a protective film.

Refilling method by ion beam, instrument for fabrication and observation by ion beam, and manufacturing method of electronic device

A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow () appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

Probe driving method, and probe apparatus

Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (), and fixed type conductor probe means () that is relatively fixed to an FIB generator (). Positions of probe tips are superimposed to an SIM image and displayed on a display unit ().

Apparatus for inspecting defects of devices and method of inspecting defects

A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage ( ), and fixed type conductor probe means ( ) that is relatively fixed to an FIB generator ( ). Positions of probe tips are superimposed to an SIM image and displayed on a display unit ( ).

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Hitachinaka, Japan

Isamu Sekihara