Nippon Electric Co., Ltd.

Nec Corporation

Isamu Sakuma

Masayasu Ueno

Katsuhiko Nishida

Yoshinori Ohta

Hideo Kawano

Hiroo Yonezu

Yoshishige Matsumoto

Izuo Hayashi

Taketoshi Hibiya

Mitsuhito Sakaguchi

Yasuo Nannichi

Tonao Yuasa

Takao Furuse

Taibun Kamejima

Toshio Uji

Hidoe Kawano

The apparatus includes a semiconductor laser diode, a mounting for the laser diode and a casing with a window through which light from the diode passes. The casing hermetically seals the diode. A magneto-optical member is provided between the end face of the laser diode and the window. The magneto-optical member has a spontaneous magnetization oriented in the direction of the light transmission and a magnetic field is applied to saturate the magneto-optical member.

Semiconductor laser apparatus with isolator

A buried layer semiconductor laser includes a mesa stripe comprised of a multi-layer structure having successively over a substrate at least a first semiconductor cladding layer of a first conductivity type, a semiconductor optical waveguide layer of said first conductivity type, a semiconductor active layer, a second semiconductor cladding layer of a second conductivity type, and a third semiconductor cladding layer of the second conductivity type. The sides of the semiconductor optical waveguide layer are covered by a first semiconductor burying layer of the second conductivity type and having a refractive index the same as or smaller than the refractive index of the optical waveguide layer. A second semiconductor burying layer of the first conductivity type covers the sides of the active layer, the second cladding layer and the third cladding layer. The lateral width of the active layer and the second cladding layer are smaller than the lateral widths of the other layers of the multi-layer structure. In addition, the thickness of the third cladding layer is made substantially greater than the thickness of the second cladding layer while the specific resistivity and thermal resistance of the third cladding layer is made less than that of the second cladding layer. A method for fabricating such a buried layer semiconductor laser is also disclosed.

Buried-type semiconductor laser

A semiconductor laser of the rib guide type having the thickness of an active layer within a stripe-shaped region thicker than that of the outside, and thus the stripe-shaped region is made to have a waveguide action and, thereby, fundamental mode laser may be achieved.

Semiconductor laser

A semiconductor laser is provided with a semiconductor substrate having a longitudinal groove formed therein. A first cladding layer is formed on the substrate by an epitaxial process which partially fills in the groove. A waveguide layer is provided atop the first cladding layer, the waveguide layer having either a plano-convex or concave-convex configuration and being thicker at its central region than at its outward edges. An active layer and a second cladding layer are laid over the waveguide layer, whereby the first and second cladding layers serve to confine the laser light within the waveguide layer.

A semiconductor laser device in which at least one of the main surfaces of a semiconductor laser crystal body which generates heat during operation is brought into thermal contact with a silicon crystal heat-sink body.

Semiconductor laser device equipped with a silicon heat sink

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Tokyo, Japan

Isamu Sakuma