Rohm Co., Ltd.

Isamu Nishimura

Michihiko Mifuji

Yasuhiro Fuwa

Satoshi Kageyama

Mamoru Yamagami

Daiki Yanagishima

Toshiyuki Ishikawa

Kosei Osada

Ryotaro Yagi

Nobuyuki Kasahara

Tetsuya Kagawa

Junichi Hikita

Nobuhisa Kumamoto

Kazumasa Nishio

Yuichi Nakao

Koji Yamamoto

Hideaki Yanagida

Hirofumi Takeda

Takahisa Yamaha

Yoshihiro Sekimoto

Akihito Saito

Satoshi Nakagawa

Makoto Murata

Taro Hayashi

Motohiro Toyonaga

Natsuki Sakamoto

Yoshiyasu Morishima

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Semiconductor device and semiconductor module

A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.

Semiconductor device including passive element

A coil module includes a conductor layer, at least one element, and a sealing resin. The conductor layer is formed along a predetermined plane and includes a wiring portion and a helical-shaped coil portion. The at least one element is mounted on the wiring portion. The sealing resin covers the conductor layer and the at least one element. The sealing resin is integrally formed of a single type of resin material and has a predetermined thickness in a first direction perpendicular to the plane.

Coil module, actuator provided with coil module, and method for manufacturing coil module

Semiconductor device having distinguishable electrodes

A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.

Semiconductor device

A semiconductor device, includes: a semiconductor element including an element main surface and an element back surface facing opposite sides in a thickness direction; a wiring part electrically connected to the semiconductor element; an electrode pad electrically connected to the wiring part; a sealing resin configured to cover a part of the semiconductor element; and a first metal layer configured to make contact with the element back surface and exposed from the sealing resin, wherein the semiconductor element overlaps the first metal layer when viewed in the thickness direction.

Semiconductor device and method of manufacturing semiconductor device

A thermal print head includes: a substrate; a resistor layer supported by the substrate and including a plurality of heat generating portions arranged in a main scanning direction; a wiring layer supported by the substrate and forming an energizing path to the plurality of heat generating portions; and an insulating layer interposed between the substrate and the resistor layer, wherein the substrate has a cavity portion overlapping the plurality of heat generating portions when viewed in a thickness direction of the substrate.

Thermal print head and method of manufacturing thermal print head

A semiconductor device includes a semiconductor element, a wiring portion, an electrode pad, a sealing resin and a heat dissipation layer. The semiconductor element has a front surface and a back surface opposite to the front surface in a thickness direction of the semiconductor device. The wiring portion is electrically connected to the semiconductor element. The electrode pad is electrically connected to the wiring portion. The sealing resin covers the semiconductor element. The heat dissipation layer is held in contact with the back surface of the semiconductor element and exposed from the sealing resin. The semiconductor element overlaps with the first heat dissipation layer as viewed in the thickness direction.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor element, a first substrate, a first electrode, a second electrode and a sealing resin. The first substrate has a first front surface and a first back surface that are spaced apart from each other in a thickness direction. The semiconductor element is mounted on the first main surface. The first electrode includes a first conductive portion and a second conductive portion. The first conductive portion is formed on a portion of the first front surface. The second conductive portion is connected to the first conductive portion and overlaps with the first substrate as viewed in a first direction perpendicular to the thickness direction. The sealing resin covers the semiconductor element. The second electrode is exposed from the sealing resin and electrically connected to the first electrode. The second electrode is in contact with the second conductive portion.

A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.

Semiconductor device, and method for manufacturing the same

An electronic component includes a first functional element including a pair of first connecting electrode portions formed on a first mounting surface, a pair of pillar electrodes connected to the corresponding first connecting electrode portions, a second functional element that includes a pair of second connecting electrode portions formed on a second mounting surface and that is arranged in a space defined by the first mounting surface of the first functional element and the pair of pillar electrodes, a pair of pad electrodes connected to the corresponding second connecting electrode portions, and a sealing resin that seals the pair of pillar electrodes, the pair of pad electrodes and the second functional element so as to expose the first lower surfaces of the pair of pillar electrodes and the second lower surfaces of the pair of pad electrodes.

Electronic component and a method for manufacturing an electronic component

The present disclosure provides a semiconductor device for high efficiently releasing heat generated from a semiconductor element to the outside. The semiconductor device of the present disclosure includes a substrate, made of an intrinsic semiconductor material, having a substrate main surface facing toward a thickness direction z, and configured to have a recess recessed from the substrate main surface; an internal wiring layer, disposed on the substrate main surface and the recess; a columnar conductor, protruding from the internal wiring layer disposed on the substrate main surface toward a direction in which the substrate main surface faces; a semiconductor element, having an element main surface facing the same direction as the substrate main surface, and electrically connected to the internal wiring layer; and a sealing resin, filled into the recess and covering a portion of each of the columnar conductor and the semiconductor element; wherein the semiconductor element has a portion overlapping the recess when viewed in the thickness direction of the substrate, and the semiconductor device is configured to have a heat dissipating layer being in contact with the element main surface and exposed to the outside.

Growing community of inventors

Kyoto, Japan

Isamu Nishimura