Tdk Corporation

Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Other

Tkd Corporation

Dexerials Corporation

Isamu Kobori

Michio Arai

Etsuo Mitsuhashi

Kenji Nakaya

Kazutoshi Ohisa

Yukio Yamauchi

Naoya Sakamoto

Mitsufumi Codama

Ichiro Takayama

Masami Mori

Kazushi Sugiura

Takashi Inushima

Tetsushi Inoue

Hiroshi Yamamoto

Tsuneo Kusunoki

Katsutoshi Ohno

Takahiro Igarashi

A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

Display unit and electronic apparatus

A substrate includes: a plurality of pixels arranged two-dimensionally on a common wiring substrate, and each including a plurality of types of light emitting elements that differ from one another in emission color; a plurality of light-scattering sections each provided for a corresponding one of the pixels, and each provided above the corresponding one of the pixels; and a light-shielding section provided in a gap between adjacent ones of the pixels, or provided in an opposing region that opposes the gap when viewed in a normal direction of the wiring substrate.

Substrate, display panel, and display apparatus

A phosphor, an optical device, and a display device are provided. The phosphor includes a composition represented by (SrCaBa)(GaAlIn)S:Eu, wherein the concentration of europium is in the range of 1 to 9 mole percent; 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and x+y&#x2266;1; 0&#x2266;m&#x2266;1, 0&#x2266;n&#x2266;1, m+n&#x2266;1, and 2.9&#x2266;a&#x2266;5.9; and a main absorption wavelength range of the excitation is selected either a first wavelength range that overlaps the entirety of a reference wavelength range and extends to the shorter wavelength side or a second wavelength range that overlaps the entirety of the reference wavelength range and extends to the longer wavelength side according to the value a.

Phosphor, optical device, and display device

The invention provides a display device capable of improving color separation characteristics by using a color filter having high transmittance. An organic light emitting device emits blue light, red light, and green light, and the emission intensity of the green light is relatively lower than those of the blue light and the red light. A green fluorescence conversion layer for absorbing a blue wavelength component and emits green light is provided between the organic light emitting device and a green filter layer. Color purity of blue and red is improved by decreasing a green light emitting component causing decreasing color purity when blue and red are separated by a color filter, and by using the color filter having high transmittance and low density. The decreased green light emitting component is complemented with the green fluorescence conversion layer, chromaticity is adjusted by a green filter layer, and thereby light emitting efficiency and color reproducibility are improved.

Display device, display unit, and imaging device

A display apparatus that includes: a plurality of light-emitting devices disposed on a substrate with an accumulation of, in this or inverse order, a light transmissive electrode layer, a functional layer including a light-emitting layer, and an opposing electrode layer; and a color conversion layer that is provided on a side of the light transmissive electrode layer for any of the light-emitting devices, and applies color conversion to an emitted light generated by the light-emitting layer for the light-emitting device. In the display apparatus, the light-emitting devices each have a reflective surface on a position where the light-emitting layer is sandwiched with the light transmissive electrode layer, and an optical distance between the reflective surface and the light-emitting layer varies by the light-emitting devices depending on provision of the color conversion layer.

Display apparatus

A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 &#x3bc;mor less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 &#x3bc;mor less. A method of manufacturing a thin-film transistor comprising the steps of:

Method of manufacturing a semiconductor method of manufacturing a thin-film transistor and thin-film transistor

An active matrix circuit comprises a semiconductor layer, and a p-type impurity region provided in said semiconductor layer, and an interlayer insulating film comprising silicon nitride provided over said semiconductor layer.

Active matrix circuit

In an organic EL device, a light emitting layer contains a specific coumarin derivative, and a hole injecting and/or transporting layer contains a specific tetraaryldiamine derivative. Also a light emitting layer in the form of a mix layer contains a specific coumarin derivative, a specific quinacridone compound or a specific styryl amine compound. There are provided at least two light emitting layers including a light emitting layer of the mix layer type wherein at least two dopants are contained so that at least two luminescent species may emit light. There is obtained an organic EL device capable of high luminance and continuous light emission and ensuring reliability. Multi-color light emission becomes possible.

Organic EL device

Method of fabricating a thin-film transistor having a plurality of island-like regions

In a thin film semiconductor device having a substrate ( ), an active layer ( ), a gate insulation layer ( ), and a gate electrode ( ), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using a gas made up of poly silane Si H , where n is an integer, and chloride gas, and effecting solid phase growth to produce said amorphous silicon layer. The addition of chlorine to the CVD gas used in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature with a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.

Process for making an amorphous silicon thin film semiconductor device

To realize an organic EL device having an excellent hole injection efficiency, improved luminous efficiency, low operating voltage, and low cost, the invention provides an organic EL device comprising a hole injecting electrode, an electron injecting electrode, and at least one organic layer between the electrodes, at least one of the organic layer having a light emitting function. The device further has a high resistance inorganic hole injecting layer between the hole injecting electrode and the organic layer. The high resistance inorganic hole injecting layer is capable of blocking electrons and has conduction paths for carrying holes.

Organic electroluminescent device with high resistance inorganic hole injecting layer

The invention provides an organic EL device comprising a hole injecting electrode, and at least one organic layer disposed between the electrodes, wherein the electron injecting electrode is comprised of an AlLi alloy containing 0.4-14 at % of lithium deposited by a sputtering process. This improves the film formability and adhesion at the interface between the electron injecting electrode and the organic layer, realizing an organic EL device featuring a high luminance, high efficiency, long lifetime, and high display quality.

Organic electroluminescent device with electron injecting electrode containing ALLi alloy

The organic EL device of the present invention fulfills the object of realizing an organic EL device which exhibits an excellent hole injecting efficiency and an improved light emitting efficiency and which can be operated at a low drive voltage and manufactured at a reduced cost. In order to attain such object, the organic EL device comprises a hole injecting electrode, a negative electrode, and one or more organic layers between the electrodes wherein at least one of said organic layers has a light emitting function. A high resistivity inorganic hole injecting layer is provided between said hole injecting electrode and the organic layer. This layer has conduction paths for electron blockage and hole transportation. An inorganic insulative electron injecting and transporting layer is provided between the light emitting layer and the negative electrode. This layer contains at least one oxide selected from strontium oxide, magnesium oxide, calcium oxide, lithium oxide, rubidium oxide, potassium oxide, sodium oxide and cesium oxide as its main component.

Organic electroluminescent device

An organic EL device has a hole injecting electrode, an electron injecting electrode, at least one organic layer between the electrodes, and an inorganic insulating hole injecting and transporting layer between the hole injecting electrode and the organic layer. The inorganic insulating hole injecting and transporting layer contains silicon oxide and/or germanium oxide as a main component, the main component being represented by (Si Ge )O wherein 0&lE;x&lE;1 and 1.8&lE;y&lE;2.5, and further contains 0.01 to 2% by weight of at least one element selected from among Ar, Kr, Xe, and Ne. The device has the advantages of both organic and inorganic materials, a long lifetime, improved efficiency, low operating voltage, and low cost, and can provide a high luminance of light emission when applied to displays of the time-division driving mode, and realize large screen, high definition displays.

Growing community of inventors

Tokyo, Japan

Isamu Kobori