Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Isamu Aokura

Hitoshi Yamanishi

Hiroshi Sakakima

Koichi Osano

Terutsugu Segawa

Kumio Nago

Fuminori Takami

Toshiyuki Suemitsu

Youichi Ohnishi

Teiichi Kimura

Takahiro Takisawa

Tomohiro Okumura

Toshiyuki Fukuda

Masahiro Yamamoto

Naoki Suzuki

Yoshihiko Yagi

Tatsuo Sasaoka

Kazuki Fukada

Masahide Yokoyama

Hiroshi Hayata

Munekazu Nishihara

Yukitoshi Ota

Satoshi Horie

Keiji Miki

Tanejiro Ikeda

Yasushi Inoue

Nobuyuki Mori

Fumio Sakai

Kensuke Kishishita

A compression pipe is configured with a wave drawing section and an air compressing section, a gas-liquid introduction on-off valve is disposed in wave drawing section, a gas-liquid introduction on-off valve is opened at an initial stage of a pushing wave, the gas-liquid introduction on-off valve is closed at the same time when a wave that maintains a speed flows into a wave receiving box. Accordingly, the wave is drawn into the air compressing section, is stored in a compressed air storage tank by converting kinetic energy of the wave into compressed air, and can be utilized for power generation and the like.

Wave power utilization device and control method of wave power utilization device

By receiving a leading wave in a state where a wave receiving box is sunk on the coast, a pressure return pipe and a pressure return on-off valve are controlled, and a water surface in an air compression pipe is set to a reference water surface lower than an air throttle, even when there are tide level fluctuations and wave size variations in one wave receiving box, energy of the wave is converted into compressed air without loss, is stored in a compressed air storage tank, and can be used for power generation or the like.

Wave power utilization device and control method thereof

A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) () having solder bumps () (projecting electrodes) formed on electrode pads, and a first wiring board () having connection terminals () to which the respective solder bumps () of the IC chips () are connected, external connection terminals () for connection to an external apparatus, and conductor wires () provided in respective groove portions formed in a board surface and connected to the respective connection terminals (). In spite of the reduced pitch of the conductor wires (), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

Semiconductor device having recessed connector portions

A bonding method and an apparatus that enable metal bonding under the atmospheric pressure and at room temperature, wherein the surfaces of objects () to be bonded together are cleaned in an initial cleaning step (S) to remove bonding inhibitor substances (G) such as oxides and adhered substances; one () of the bonding surfaces is provided with an uneven profile with a predetermined roughness in a surface roughness control step (S); a surface treatment step (S) is performed to remove the substances (F) that have been removed but adhered to the bonding surfaces () again; and the uneven bonding surface () is pressed against the other bonding surface () to bond them together.

Bonding method and apparatus

A sputtering system includes a vacuum chamber, a sputtering electrode provided in the vacuum chamber, a target supported on the sputtering electrode with a front surface of the target and a substrate disposed in the vacuum chamber so as to be opposed to each other. A high-frequency or DC power source supplies a high-frequency or DC power to the sputtering electrode to generate plasma on the target, and an antenna is provided for generating an electromagnetic wave and is disposed outside the vacuum chamber and near the target. An electromagnetic-wave inlet window for introducing into the vacuum chamber an electromagnetic wave generated from the antenna is provided in a wall of the vacuum chamber.

Sputtering system

In a sputtering apparatus, in a vacuum chamber having a gas supply and a gas discharge functions, a substrate is set to a supporting part therefor and a target is disposed at an electrode connected with a power source within a plane opposite to the substrate, so as to form a film while holding the substrate in a fixed state to the target. The electrode is divided into three or more electrode parts, the target is divided and disposed on the three or more electrode parts within the plane, and a magnet is arranged for each divided target at a position where a line of magnetic force on a surface of the each target is generated by each magnet.

Sputtering apparatus

The film thickness of a thin film formed on substrate,is made symmetrical and uniform by eliminating currents of gas over target,by performing film deposition in a condition with gas supply and vacuum evacuation cut off, after adjusting the interior of vacuum chamber,to the predetermined pressure.

Sputtering method and apparatus

A magnetic head includes a back core made of ferrite and a magnetic alloy film arranged in a vicinity of a magnetic gap and having an average composition expressed by TxMyNz wherein T is Fe or Co; M is at least one metal selected from a group consisting of Nb, Zr, Ta, Hf, Cr, W and Mo; N is nitrogen; and x, y and z are atomic percentages holding 65.ltoreq.x.ltoreq.94, 5.ltoreq.y.ltoreq.25, 0&lt;z.ltoreq.20 and x+y+z=100. The head includes an oxygen diffusion prevention part of a higher concentration of nitrogen than included in the whole magnetic alloy film which is provided at the magnetic alloy film at an interfacial part to the ferrite core.

Magnetic head and manufacturing method therefor

A sputtering apparatus uses a plurality of rectangular targets to form a thin film on a substrate, and includes a plurality of magnets disposed along both side edges of each target in such a manner that the polarities of adjacent magnets along the side edges of the targets are opposite, and polarities of the magnets confronting each other across the targets are opposite. The surfaces of at least two targets are inclined to a surface of the substrate at an angle not smaller than 30.degree. and not larger than 60.degree..

Sputtering apparatus and method

A sputtering apparatus for performing sputtering operation by using a rectangular target made of ferromagnetic material, the apparatus includes an electrode in which one first permanent magnet is disposed on each side edge of a front surface of the target, polarities of the first magnets confronting each other with the target interposed between the first magnets are opposite to each other, one second permanent magnet is disposed on each side edge of a rear surface of the target, polarities of the second magnets confronting each other with the target interposed between the second magnets are opposite to each other, and the polarity of each second magnet disposed on the rear surface of the target is the same as that of the first magnet disposed on the front surface of the target.

In a laminated magnetic head core, Fe--M--N system soft magnetic thin films (M being at least one element selected from the group consisting of Ta, Nb, Zr, and Hf) and non-magnetic insulating films are alternately laminated. Each of the soft magnetic thin films is 0.2-10 .mu.m thick. Each of the non-magnetic insulating films is 10 through 1000 nm thick. One of the soft magnetic thin films shows high magnetic permeability in a different direction from that of an adjacent soft magnetic thin film via the non-magnetic insulating film within a film surface of the soft magnetic thin film.

Laminated magnetic head core

A magnetron sputtering electrode assembly which is used in a sputtering system having a rectangular flat-plate target, includes permanent magnets arranged along the longitudinal edges of the target to pass lines of magnetic forces in parallel to the surface of the rectangular flat-plate target, and a driving device for reversing polarity of the magnets to change by 180 degrees the direction of the lines of magnetic force caused by the permanent magnets passing in parallel to the surface of the rectangular flat-plate target.

Sputtering electrode

The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.

Growing community of inventors

Osaka, Japan

Isamu Aokura