Centre National De La Recherche Scientifique

Universitè De Montpellier

Innoptics

Epispeed S.a.

Université Montpellier 2 Sciences Et Techniques

Fahrenheit Thermoscope LLC

Isabelle Sagnes

Arnaud Garnache-Creuillot

Grégoire Beaudoin

Mikhael Myara

Vincent Lecocq

Hans Von Kaenel

Philippe Lalanne

Sophie Bouchoule

Luc Le Gratiet

Mohamed Sellahi

Romain Paquet

Mohammed Sellahi

Mikhaël Myara

Guillaume Jacques Saint-Girons

Laurence Ferrieres

Mohammed Seghilani

Stéphane Denet

Stéphane Blin

A laser device is provided for generating a helical-shaped optical wave and includes: (i) a gain region located between one first end defined by a first mirror and a second end defined by an exit region, (ii) a second mirror arranged so as to form with the first mirror an optical cavity including the gain region and a gap between the exit region and the second mirror, (iii) apparatus for pumping the gain region so as to generate the optical wave, wherein the laser device further includes at least one apparatus for shaping the light intensity and/or phase profiles of the optical wave and arranged for selecting at least one rotary-symmetrical transverse mode of the optical wave, the rotary-symmetrical transverse mode being chosen between those with a radial index equal to zero and with an azimuthal index being an integer with a module higher or equal to 1.

Laser device with a beam carrying controlled orbital angular momentum

A laser device for generating an optical wave including at least two frequencies, such laser device including:

Dual-frequency vertical-external-cavity surface-emitting laser device for THz generation and method for generating THz

A laser device is provided for generating an optical wave at a laser frequency, including (i) a semiconductor element having a gain region with quantum wells, the gain region being located between a first mirror and an exit region defining an optical microcavity, (ii) a second mirror distinct from the semiconductor element and arranged so as to form with the first mirror an external optical cavity including the gain region, (iii) a pump for pumping the gain region so as to generate the optical wave, wherein the optical microcavity with the gain region and the external optical cavity are arranged so that a spectral ratio between the Half Width Half Maximum (HWHM) spectral bandwidth of the modal gain and a free spectral range of the external cavity in the range of 2 to 50.

Vertical external cavity surface emitting laser devices allowing high coherence, high power and large tunability

Method for making an InGaAs/GaAs quantum well laser () on a Silicon substrate (). The method comprises the steps:

InGaAs/GaAs lasers on silicon produced by LEPECVD and MOCVD

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Paris, France

Isabelle Sagnes