Globalfoundries Inc.

Lam Research Corporation

Isabelle Orain

Taejoon Han

Gowri Kamarthy

Hoong Shing Wong

Ganesh Upadhyaya

Chang Ho Maeng

Xing Zhang

Gabriel Padron Wells

Kristina Trevino

Yuan-Hung Liu

Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.

Semiconductor structures with coplanar recessed gate layers and fabrication methods

Growing community of inventors

Alameda, CA, United States of America

Isabelle Orain