Mellanox Technologies, Ltd.

Isabelle Cestier

Elad Mentovich

Itshak Kalifa

Moshe Oron

Yuri Berk

Matan Galanty

Sylvie Rockman

Vladimir Iakovlev

Eyal Moshe Waldman

Alon Webman

Tali Septon

Eran Aharon

Yonatan Piasetzky

Anders Larsson

Attila Fülöp

Anders Gösta Larsson

Oren Steinberg

Bi-directional quantum interconnects are provided that include a first communication module and a second communication module. The first communication module includes a first quantum transmitter and a first quantum receiver, and the second communication module includes a second quantum transmitter and a second quantum receiver. The example interconnect further includes a first communication medium communicably coupling the first communication module and the second communication module such that communication is provided between the first quantum transmitter and the second quantum receiver and between the second quantum transmitter and the first quantum receiver via the first communication medium. The first quantum transmitter and the second quantum transmitter generate qubits having first and second quantum characteristics, respectively, to allow for bi-directional quantum communication over a common channel.

Bi-directional quantum interconnects

Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

Fabricating semiconductor devices, such as VCSELs, with an oxide confinement layer

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.

Continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices

VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.

Long wavelength VCSEL and integrated VCSEL systems on silicon substrates

A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL.

Vertical-cavity surface-emitting laser (VCSEL) tuned through application of mechanical stress via a piezoelectric material

An electro-optical link is provided. In an example embodiment, the electro-optical link includes a number of vertical cavity surface emitting lasers (VCSELs); one or more drivers that operate the VCSELs such that each of the VCSELs selectively emits an optical signal; one or more multiplexers that multiplex a number of optical signals into an optical fiber, each optical signal emitted by one of the VCSELs; and one or more optical fibers. At least two optical signals are multiplexed into each optical fiber of the one or more optical fibers. In some example configurations eight or sixteen optical signals are multiplexed into one optical fiber.

Dual band wavelength division multiplexing (WDM) link for vertical cavity surface emitting lasers (VCSELs)

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Haifa, Israel

Isabelle Cestier