Infineon Technologies Ag

Isabella Goetz

Andre Schmenn

Damian Sojka

Markus Zundel

Edward Fuergut

Carsten Ahrens

Thomas Fischer

Gudrun Stranzl

Egle Tylaite

Sebastian Werner

An overvoltage protection device includes a semiconductor body including a substrate region disposed beneath an upper surface of the semiconductor body, first and second contact pads disposed over the upper surface of the semiconductor body, a trenched connector formed in the semiconductor body, a vertical voltage blocking device formed in the semiconductor body, wherein the trenched connector includes a trench that is formed in the upper surface of the semiconductor body and extends to the substrate region, and a metal electrode disposed within the trench, wherein the metal electrode forms an electrically conductive connection between the first contact pad and the substrate region, and wherein the voltage blocking device is connected between the second contact pad and the substrate region.

Overvoltage protection device with trench contact

An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Arrangement and method for manufacturing the same

In accordance with an embodiment of the present invention, a method for forming a semiconductor device includes forming a device region in a substrate. The device region extends continuously from one sidewall of the substrate to an opposite sidewall of the substrate. The method further includes forming trenches in the substrate. The trenches divide the device region into active regions. The method also includes singulating the substrate by separating the substrate along the trenches.

Method of singulating semiconductor devices using isolation trenches

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Wuppertal, Germany

Isabella Goetz